Reactive magnetron co-sputtered antiferroelectric lead zirconate thin films

K. Yamakawa, S. Trolier-Mckinstry, J. P. Dougherty, S. B. Krupanidhi

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Abstract

Antiferroelectric lead zirconate thin films were formed on platinum coated silicon substrates by a reactive magnetron co-sputtering method. The films showed (240) preferred orientation. The crystallization temperatures and the preferred orientation were affected by the lead content in the films. The electric field forced transformation from the antiferroelectric phase to the ferroelectric phase was observed at room temperature with a maximum polarization value of 36 μC/cm2. The average field to excite the ferroelectric state and that for the reversion to the antiferroelectric state were 267 and 104 kV/cm respectively.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - Dec 1 1995

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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