Read-enhanced spin memories augmented by phase transition materials (Invited)

Ahmedullah Aziz, Sumeet Kumar Gupta

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Spin based memories have garnered major interest in recent times. With all of the alluring features like-non-volatility, zero-stand by leakage and dense integration in array, they suffer from not having satisfactory distinguishability between stored memory states. Recently, a novel approach of using Phase transition materials (PTM) to assist magnetic tunnel junction (MTJ) in spin memories has been proposed. This paper presents an overview of the design approach, challenges and benefits of two proposed ways of designing PTM assisted spin memories. One of the approach that uses a PTM in parallel to MTJ in read path is only applicable for memories with separate read-write paths. This approach can achieve over 1.7X better distinguishability in stored data, at least 20% increase in read stability and 4X larger sense margin (SM). On the other hand, another design which uses PTM in series with MTJ can be used for a broader spectrum of cell topologies and achieves over 17X boost in cell tunneling magneto resistance with 45% higher read stability and ∼60% more SM. No area penalties are associated with either of these techniques.

    Original languageEnglish (US)
    Title of host publication2017 IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages993-996
    Number of pages4
    ISBN (Electronic)9781509063895
    DOIs
    StatePublished - Sep 27 2017
    Event60th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2017 - Boston, United States
    Duration: Aug 6 2017Aug 9 2017

    Publication series

    NameMidwest Symposium on Circuits and Systems
    Volume2017-August
    ISSN (Print)1548-3746

    Other

    Other60th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2017
    CountryUnited States
    CityBoston
    Period8/6/178/9/17

    Fingerprint

    Phase transitions
    Tunnel junctions
    Data storage equipment
    Tunnelling magnetoresistance
    Cells
    Topology

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Cite this

    Aziz, A., & Gupta, S. K. (2017). Read-enhanced spin memories augmented by phase transition materials (Invited). In 2017 IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017 (pp. 993-996). [8053093] (Midwest Symposium on Circuits and Systems; Vol. 2017-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSCAS.2017.8053093
    Aziz, Ahmedullah ; Gupta, Sumeet Kumar. / Read-enhanced spin memories augmented by phase transition materials (Invited). 2017 IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 993-996 (Midwest Symposium on Circuits and Systems).
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    abstract = "Spin based memories have garnered major interest in recent times. With all of the alluring features like-non-volatility, zero-stand by leakage and dense integration in array, they suffer from not having satisfactory distinguishability between stored memory states. Recently, a novel approach of using Phase transition materials (PTM) to assist magnetic tunnel junction (MTJ) in spin memories has been proposed. This paper presents an overview of the design approach, challenges and benefits of two proposed ways of designing PTM assisted spin memories. One of the approach that uses a PTM in parallel to MTJ in read path is only applicable for memories with separate read-write paths. This approach can achieve over 1.7X better distinguishability in stored data, at least 20{\%} increase in read stability and 4X larger sense margin (SM). On the other hand, another design which uses PTM in series with MTJ can be used for a broader spectrum of cell topologies and achieves over 17X boost in cell tunneling magneto resistance with 45{\%} higher read stability and ∼60{\%} more SM. No area penalties are associated with either of these techniques.",
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    Aziz, A & Gupta, SK 2017, Read-enhanced spin memories augmented by phase transition materials (Invited). in 2017 IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017., 8053093, Midwest Symposium on Circuits and Systems, vol. 2017-August, Institute of Electrical and Electronics Engineers Inc., pp. 993-996, 60th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2017, Boston, United States, 8/6/17. https://doi.org/10.1109/MWSCAS.2017.8053093

    Read-enhanced spin memories augmented by phase transition materials (Invited). / Aziz, Ahmedullah; Gupta, Sumeet Kumar.

    2017 IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 993-996 8053093 (Midwest Symposium on Circuits and Systems; Vol. 2017-August).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

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    Aziz A, Gupta SK. Read-enhanced spin memories augmented by phase transition materials (Invited). In 2017 IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 993-996. 8053093. (Midwest Symposium on Circuits and Systems). https://doi.org/10.1109/MWSCAS.2017.8053093