Read optimized MRAM with separate read-write paths based on concerted operation of magnetic tunnel junction with correlated material

Ahmedullah Aziz; Nikhil Shukla; Suman Datta; Sumeet Kumar Gupta

doi:10.1109/DRC.2015.7175544

Read optimized MRAM with separate read-write paths based on concerted operation of magnetic tunnel junction with correlated material

Ahmedullah Aziz, Nikhil Shukla, Suman Datta, Sumeet Kumar Gupta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We propose a technique based on connecting CM like VO₂ in parallel with the MTJ in the read path of multi-port MRAMs. Utilizing insulator-metal transitions in CM, the proposed cell achieves 1.7X to 4.3X improvement in cell TMR (CTMR) along with 7% to 22% higher read disturb margin compared to a baseline cell. Due to the separation of read-write paths in multi-port MRAMs, the CM has no effect on the write operation. The proposed idea is not limited to VO₂ and its benefits may be further enhanced by exploring other suitable CMs [6] or by tuning the properties like resistivities, critical currents and thermal stability by techniques like strain [7] or Cr doping [8].

Original language	English (US)
Title of host publication	73rd Annual Device Research Conference, DRC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	43-44
Number of pages	2
ISBN (Electronic)	9781467381345
DOIs	https://doi.org/10.1109/DRC.2015.7175544
State	Published - Aug 3 2015
Event	73rd Annual Device Research Conference, DRC 2015 - Columbus, United States Duration: Jun 21 2015 → Jun 24 2015

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2015-August
ISSN (Print)	1548-3770

Other

Other	73rd Annual Device Research Conference, DRC 2015
Country	United States
City	Columbus
Period	6/21/15 → 6/24/15

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2015.7175544

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Aziz, A., Shukla, N., Datta, S., & Gupta, S. K. (2015). Read optimized MRAM with separate read-write paths based on concerted operation of magnetic tunnel junction with correlated material. In 73rd Annual Device Research Conference, DRC 2015 (pp. 43-44). [7175544] (Device Research Conference - Conference Digest, DRC; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2015.7175544

Aziz, Ahmedullah ; Shukla, Nikhil ; Datta, Suman ; Gupta, Sumeet Kumar. / Read optimized MRAM with separate read-write paths based on concerted operation of magnetic tunnel junction with correlated material. 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 43-44 (Device Research Conference - Conference Digest, DRC).

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abstract = "We propose a technique based on connecting CM like VO2 in parallel with the MTJ in the read path of multi-port MRAMs. Utilizing insulator-metal transitions in CM, the proposed cell achieves 1.7X to 4.3X improvement in cell TMR (CTMR) along with 7% to 22% higher read disturb margin compared to a baseline cell. Due to the separation of read-write paths in multi-port MRAMs, the CM has no effect on the write operation. The proposed idea is not limited to VO2 and its benefits may be further enhanced by exploring other suitable CMs [6] or by tuning the properties like resistivities, critical currents and thermal stability by techniques like strain [7] or Cr doping [8].",

author = "Ahmedullah Aziz and Nikhil Shukla and Suman Datta and Gupta, {Sumeet Kumar}",

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Aziz, A, Shukla, N, Datta, S & Gupta, SK 2015, Read optimized MRAM with separate read-write paths based on concerted operation of magnetic tunnel junction with correlated material. in 73rd Annual Device Research Conference, DRC 2015., 7175544, Device Research Conference - Conference Digest, DRC, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. 43-44, 73rd Annual Device Research Conference, DRC 2015, Columbus, United States, 6/21/15. https://doi.org/10.1109/DRC.2015.7175544

Read optimized MRAM with separate read-write paths based on concerted operation of magnetic tunnel junction with correlated material. / Aziz, Ahmedullah; Shukla, Nikhil; Datta, Suman; Gupta, Sumeet Kumar.

73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 43-44 7175544 (Device Research Conference - Conference Digest, DRC; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - We propose a technique based on connecting CM like VO2 in parallel with the MTJ in the read path of multi-port MRAMs. Utilizing insulator-metal transitions in CM, the proposed cell achieves 1.7X to 4.3X improvement in cell TMR (CTMR) along with 7% to 22% higher read disturb margin compared to a baseline cell. Due to the separation of read-write paths in multi-port MRAMs, the CM has no effect on the write operation. The proposed idea is not limited to VO2 and its benefits may be further enhanced by exploring other suitable CMs [6] or by tuning the properties like resistivities, critical currents and thermal stability by techniques like strain [7] or Cr doping [8].

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Aziz A, Shukla N, Datta S, Gupta SK. Read optimized MRAM with separate read-write paths based on concerted operation of magnetic tunnel junction with correlated material. In 73rd Annual Device Research Conference, DRC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 43-44. 7175544. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2015.7175544