TY - JOUR
T1 - Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors
AU - Lin, Yu Chuan
AU - Jariwala, Bhakti
AU - Bersch, Brian M.
AU - Xu, Ke
AU - Nie, Yifan
AU - Wang, Baoming
AU - Eichfeld, Sarah M.
AU - Zhang, Xiaotian
AU - Choudhury, Tanushree H.
AU - Pan, Yi
AU - Addou, Rafik
AU - Smyth, Christopher M.
AU - Li, Jun
AU - Zhang, Kehao
AU - Haque, M. Aman
AU - Fölsch, Stefan
AU - Feenstra, Randall M.
AU - Wallace, Robert M.
AU - Cho, Kyeongjae
AU - Fullerton-Shirey, Susan K.
AU - Redwing, Joan M.
AU - Robinson, Joshua A.
N1 - Funding Information:
Research is supported by the Center for Low Energy Systems Technology (LEAST). LEAST is one of six Semiconductor Research STARnet centers sponsored by MARCO and DARPA. M.A.H. acknowledges the support from the National Science Foundation (NSF) (DMR 1609060). T.C., J.A.R., and J.M.R. acknowledge support from the 2DCC-MIP through NSF cooperative agreement DMR-1539916. C.M.S., R.A., and R.M.W. acknowledge support in part from NSF Award No. 1407765 under the US/Ireland UNITE collaboration and also from the Southwest Academy on Nanoelectronics (SWAN) sponsored by the Nanoelectronic Research Initiative and NIST. K.Z. is supported by Center for Atomically Thin Multifunctional Coatings (ATOMIC), sponsored by the National Science Foundation (NSF) division of Industrial, Innovation & Partnership (IIP) under award #1540018. Y.N. thanks the Texas Advance Computing Center (TACC) for providing computation resources. We acknowledge Ke Wang and Haiying Wang at the Materials Research Institute at the Penn State University for their assistance in TEM sample preparation and imaging capture. We also thank Nicholas Borys at the Molecular Foundry at Lawrence Berkeley National Laboratory for performing optical measurements on our WSe2 samples.
Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/2/27
Y1 - 2018/2/27
N2 - Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe2) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe2/sapphire exhibit ambipolar behavior with excellent on/off ratios (∼107), high current density (1-10 μA·μm-1), and good field-effect transistor mobility (∼30 cm2·V-1·s-1) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.
AB - Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe2) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe2/sapphire exhibit ambipolar behavior with excellent on/off ratios (∼107), high current density (1-10 μA·μm-1), and good field-effect transistor mobility (∼30 cm2·V-1·s-1) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.
UR - http://www.scopus.com/inward/record.url?scp=85042116564&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85042116564&partnerID=8YFLogxK
U2 - 10.1021/acsnano.7b07059
DO - 10.1021/acsnano.7b07059
M3 - Article
C2 - 29360349
AN - SCOPUS:85042116564
VL - 12
SP - 965
EP - 975
JO - ACS Nano
JF - ACS Nano
SN - 1936-0851
IS - 2
ER -