Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

Yu Chuan Lin; Bhakti Jariwala; Brian M. Bersch; Ke Xu; Yifan Nie; Baoming Wang; Sarah M. Eichfeld; Xiaotian Zhang; Tanushree H. Choudhury; Yi Pan; Rafik Addou; Christopher M. Smyth; Jun Li; Kehao Zhang; M. Aman Haque; Stefan Fölsch; Randall M. Feenstra; Robert M. Wallace; Kyeongjae Cho; Susan K. Fullerton-Shirey; Joan M. Redwing; Joshua A. Robinson

doi:10.1021/acsnano.7b07059

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

Yu Chuan Lin, Bhakti Jariwala, Brian M. Bersch, Ke Xu, Yifan Nie, Baoming Wang, Sarah M. Eichfeld, Xiaotian Zhang, Tanushree H. Choudhury, Yi Pan, Rafik Addou, Christopher M. Smyth, Jun Li, Kehao Zhang, M. Aman Haque, Stefan Fölsch, Randall M. Feenstra, Robert M. Wallace, Kyeongjae Cho, Susan K. Fullerton-ShireyJoan M. Redwing, Joshua A. Robinson

Research output: Contribution to journal › Article › peer-review

131 Scopus citations

Abstract

Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe₂) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe₂/sapphire exhibit ambipolar behavior with excellent on/off ratios (∼10⁷), high current density (1-10 μA·μm^-1), and good field-effect transistor mobility (∼30 cm²·V^-1·s^-1) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.

Original language	English (US)
Pages (from-to)	965-975
Number of pages	11
Journal	ACS nano
Volume	12
Issue number	2
DOIs	https://doi.org/10.1021/acsnano.7b07059
State	Published - Feb 27 2018

All Science Journal Classification (ASJC) codes

Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

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10.1021/acsnano.7b07059

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Lin, Y. C., Jariwala, B., Bersch, B. M., Xu, K., Nie, Y., Wang, B., Eichfeld, S. M., Zhang, X., Choudhury, T. H., Pan, Y., Addou, R., Smyth, C. M., Li, J., Zhang, K., Haque, M. A., Fölsch, S., Feenstra, R. M., Wallace, R. M., Cho, K., ... Robinson, J. A. (2018). Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors. ACS nano, 12(2), 965-975. https://doi.org/10.1021/acsnano.7b07059

@article{32b90557b0004127b971a8aca565b34f,

title = "Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors",

abstract = "Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe2) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe2/sapphire exhibit ambipolar behavior with excellent on/off ratios (∼107), high current density (1-10 μA·μm-1), and good field-effect transistor mobility (∼30 cm2·V-1·s-1) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.",

author = "Lin, {Yu Chuan} and Bhakti Jariwala and Bersch, {Brian M.} and Ke Xu and Yifan Nie and Baoming Wang and Eichfeld, {Sarah M.} and Xiaotian Zhang and Choudhury, {Tanushree H.} and Yi Pan and Rafik Addou and Smyth, {Christopher M.} and Jun Li and Kehao Zhang and Haque, {M. Aman} and Stefan F{\"o}lsch and Feenstra, {Randall M.} and Wallace, {Robert M.} and Kyeongjae Cho and Fullerton-Shirey, {Susan K.} and Redwing, {Joan M.} and Robinson, {Joshua A.}",

note = "Funding Information: Research is supported by the Center for Low Energy Systems Technology (LEAST). LEAST is one of six Semiconductor Research STARnet centers sponsored by MARCO and DARPA. M.A.H. acknowledges the support from the National Science Foundation (NSF) (DMR 1609060). T.C., J.A.R., and J.M.R. acknowledge support from the 2DCC-MIP through NSF cooperative agreement DMR-1539916. C.M.S., R.A., and R.M.W. acknowledge support in part from NSF Award No. 1407765 under the US/Ireland UNITE collaboration and also from the Southwest Academy on Nanoelectronics (SWAN) sponsored by the Nanoelectronic Research Initiative and NIST. K.Z. is supported by Center for Atomically Thin Multifunctional Coatings (ATOMIC), sponsored by the National Science Foundation (NSF) division of Industrial, Innovation & Partnership (IIP) under award #1540018. Y.N. thanks the Texas Advance Computing Center (TACC) for providing computation resources. We acknowledge Ke Wang and Haiying Wang at the Materials Research Institute at the Penn State University for their assistance in TEM sample preparation and imaging capture. We also thank Nicholas Borys at the Molecular Foundry at Lawrence Berkeley National Laboratory for performing optical measurements on our WSe2 samples. Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = feb,

day = "27",

doi = "10.1021/acsnano.7b07059",

language = "English (US)",

volume = "12",

pages = "965--975",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "2",

}

Lin, YC, Jariwala, B, Bersch, BM, Xu, K, Nie, Y, Wang, B, Eichfeld, SM, Zhang, X, Choudhury, TH, Pan, Y, Addou, R, Smyth, CM, Li, J, Zhang, K, Haque, MA, Fölsch, S, Feenstra, RM, Wallace, RM, Cho, K, Fullerton-Shirey, SK, Redwing, JM & Robinson, JA 2018, 'Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors', ACS nano, vol. 12, no. 2, pp. 965-975. https://doi.org/10.1021/acsnano.7b07059

TY - JOUR

T1 - Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

AU - Lin, Yu Chuan

AU - Jariwala, Bhakti

AU - Bersch, Brian M.

AU - Xu, Ke

AU - Nie, Yifan

AU - Wang, Baoming

AU - Eichfeld, Sarah M.

AU - Zhang, Xiaotian

AU - Choudhury, Tanushree H.

AU - Pan, Yi

AU - Addou, Rafik

AU - Smyth, Christopher M.

AU - Li, Jun

AU - Zhang, Kehao

AU - Haque, M. Aman

AU - Fölsch, Stefan

AU - Feenstra, Randall M.

AU - Wallace, Robert M.

AU - Cho, Kyeongjae

AU - Fullerton-Shirey, Susan K.

AU - Redwing, Joan M.

AU - Robinson, Joshua A.

N1 - Funding Information: Research is supported by the Center for Low Energy Systems Technology (LEAST). LEAST is one of six Semiconductor Research STARnet centers sponsored by MARCO and DARPA. M.A.H. acknowledges the support from the National Science Foundation (NSF) (DMR 1609060). T.C., J.A.R., and J.M.R. acknowledge support from the 2DCC-MIP through NSF cooperative agreement DMR-1539916. C.M.S., R.A., and R.M.W. acknowledge support in part from NSF Award No. 1407765 under the US/Ireland UNITE collaboration and also from the Southwest Academy on Nanoelectronics (SWAN) sponsored by the Nanoelectronic Research Initiative and NIST. K.Z. is supported by Center for Atomically Thin Multifunctional Coatings (ATOMIC), sponsored by the National Science Foundation (NSF) division of Industrial, Innovation & Partnership (IIP) under award #1540018. Y.N. thanks the Texas Advance Computing Center (TACC) for providing computation resources. We acknowledge Ke Wang and Haiying Wang at the Materials Research Institute at the Penn State University for their assistance in TEM sample preparation and imaging capture. We also thank Nicholas Borys at the Molecular Foundry at Lawrence Berkeley National Laboratory for performing optical measurements on our WSe2 samples. Publisher Copyright: © 2018 American Chemical Society.

PY - 2018/2/27

Y1 - 2018/2/27

N2 - Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe2) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe2/sapphire exhibit ambipolar behavior with excellent on/off ratios (∼107), high current density (1-10 μA·μm-1), and good field-effect transistor mobility (∼30 cm2·V-1·s-1) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.

AB - Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe2) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe2/sapphire exhibit ambipolar behavior with excellent on/off ratios (∼107), high current density (1-10 μA·μm-1), and good field-effect transistor mobility (∼30 cm2·V-1·s-1) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.

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UR - http://www.scopus.com/inward/citedby.url?scp=85042116564&partnerID=8YFLogxK

U2 - 10.1021/acsnano.7b07059

DO - 10.1021/acsnano.7b07059

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AN - SCOPUS:85042116564

VL - 12

SP - 965

EP - 975

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 2

ER -

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors

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