Abstract
Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe 2 ) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe 2 /sapphire exhibit ambipolar behavior with excellent on/off ratios (∼10 7 ), high current density (1-10 μA·μm -1 ), and good field-effect transistor mobility (∼30 cm 2 ·V -1 ·s -1 ) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 965-975 |
| Number of pages | 11 |
| Journal | ACS Nano |
| Volume | 12 |
| Issue number | 2 |
| DOIs | |
| State | Published - Feb 27 2018 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Engineering(all)
- Physics and Astronomy(all)
Cite this
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Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors. / Lin, Yu Chuan; Jariwala, Bhakti; Bersch, Brian M.; Xu, Ke; Nie, Yifan; Wang, Baoming; Eichfeld, Sarah M.; Zhang, Xiaotian; Choudhury, Tanushree Holme; Pan, Yi; Addou, Rafik; Smyth, Christopher M.; Li, Jun; Zhang, Kehao; Haque, Md Amanul; Fölsch, Stefan; Feenstra, Randall M.; Wallace, Robert M.; Cho, Kyeongjae; Fullerton-Shirey, Susan K.; Redwing, Joan Marie; Robinson, Joshua Alexander.
In: ACS Nano, Vol. 12, No. 2, 27.02.2018, p. 965-975.Research output: Contribution to journal › Article
TY - JOUR
T1 - Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors
AU - Lin, Yu Chuan
AU - Jariwala, Bhakti
AU - Bersch, Brian M.
AU - Xu, Ke
AU - Nie, Yifan
AU - Wang, Baoming
AU - Eichfeld, Sarah M.
AU - Zhang, Xiaotian
AU - Choudhury, Tanushree Holme
AU - Pan, Yi
AU - Addou, Rafik
AU - Smyth, Christopher M.
AU - Li, Jun
AU - Zhang, Kehao
AU - Haque, Md Amanul
AU - Fölsch, Stefan
AU - Feenstra, Randall M.
AU - Wallace, Robert M.
AU - Cho, Kyeongjae
AU - Fullerton-Shirey, Susan K.
AU - Redwing, Joan Marie
AU - Robinson, Joshua Alexander
PY - 2018/2/27
Y1 - 2018/2/27
N2 - Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe 2 ) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe 2 /sapphire exhibit ambipolar behavior with excellent on/off ratios (∼10 7 ), high current density (1-10 μA·μm -1 ), and good field-effect transistor mobility (∼30 cm 2 ·V -1 ·s -1 ) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.
AB - Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe 2 ) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe 2 /sapphire exhibit ambipolar behavior with excellent on/off ratios (∼10 7 ), high current density (1-10 μA·μm -1 ), and good field-effect transistor mobility (∼30 cm 2 ·V -1 ·s -1 ) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.
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U2 - 10.1021/acsnano.7b07059
DO - 10.1021/acsnano.7b07059
M3 - Article
C2 - 29360349
AN - SCOPUS:85042116564
VL - 12
SP - 965
EP - 975
JO - ACS Nano
JF - ACS Nano
SN - 1936-0851
IS - 2
ER -