Recent advances in GaN power electronics

Karim Boutros, Rongming Chu, Brian Hughes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Abstract

Gallium Nitride power devices are poised to replace silicon-based MOSFETs in power switching applications having weight and volume constraints, while simultaneously needing a high overall efficiency. With its projected 100x performance advantage over silicon, GaN is a game changing technology for energy-efficient power electronics. This paper reviews the advantages of GaN material and devices, the performance of these devices in power circuits, and the potential applications for this technology.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE 2013 Custom Integrated Circuits Conference, CICC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781467361460
DOIs
StatePublished - Nov 7 2013
Event35th Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2013 - San Jose, CA, United States
Duration: Sep 22 2013Sep 25 2013

Publication series

NameProceedings of the Custom Integrated Circuits Conference
ISSN (Print)0886-5930

Other

Other35th Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2013
CountryUnited States
CitySan Jose, CA
Period9/22/139/25/13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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