Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz

Yi Pei, Rongming Chu, Nicholas A. Fichtenbaum, Zhen Chen, David Brown, Likun Shen, Stacia Keller, Steven P. DenBaars, Umesh K. Mishra

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

A recessed slant gate processing has been used in AlGaN/GaN high electron mobility transistors (HEMTs) to mitigate the electric field, minimize the dispersion and increase the breakdown voltage. More than one order of magnitude of decrease in gate leakage has been observed by recessing the slant gate. For a 0.65 μm gate-length device, an extrinsic fT of 18 GHz and extrinsic fMAX of 52 GHz at a drain bias of 25 V were achieved. At 10 GHz, a state-of-the-art power density of 20.9 W/mm, with a power-added efficiency (PAE) of 40% at a drain bias of 83 V, was demonstrated.

Original languageEnglish (US)
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number45-49
DOIs
StatePublished - Dec 14 2007

Fingerprint

High electron mobility transistors
high electron mobility transistors
Electric breakdown
Electric fields
slopes
Processing
power efficiency
electrical faults
radiant flux density
leakage
electric fields

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Pei, Yi ; Chu, Rongming ; Fichtenbaum, Nicholas A. ; Chen, Zhen ; Brown, David ; Shen, Likun ; Keller, Stacia ; DenBaars, Steven P. ; Mishra, Umesh K. / Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz. In: Japanese Journal of Applied Physics, Part 2: Letters. 2007 ; Vol. 46, No. 45-49.
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abstract = "A recessed slant gate processing has been used in AlGaN/GaN high electron mobility transistors (HEMTs) to mitigate the electric field, minimize the dispersion and increase the breakdown voltage. More than one order of magnitude of decrease in gate leakage has been observed by recessing the slant gate. For a 0.65 μm gate-length device, an extrinsic fT of 18 GHz and extrinsic fMAX of 52 GHz at a drain bias of 25 V were achieved. At 10 GHz, a state-of-the-art power density of 20.9 W/mm, with a power-added efficiency (PAE) of 40{\%} at a drain bias of 83 V, was demonstrated.",
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Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz. / Pei, Yi; Chu, Rongming; Fichtenbaum, Nicholas A.; Chen, Zhen; Brown, David; Shen, Likun; Keller, Stacia; DenBaars, Steven P.; Mishra, Umesh K.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 46, No. 45-49, 14.12.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz

AU - Pei, Yi

AU - Chu, Rongming

AU - Fichtenbaum, Nicholas A.

AU - Chen, Zhen

AU - Brown, David

AU - Shen, Likun

AU - Keller, Stacia

AU - DenBaars, Steven P.

AU - Mishra, Umesh K.

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AB - A recessed slant gate processing has been used in AlGaN/GaN high electron mobility transistors (HEMTs) to mitigate the electric field, minimize the dispersion and increase the breakdown voltage. More than one order of magnitude of decrease in gate leakage has been observed by recessing the slant gate. For a 0.65 μm gate-length device, an extrinsic fT of 18 GHz and extrinsic fMAX of 52 GHz at a drain bias of 25 V were achieved. At 10 GHz, a state-of-the-art power density of 20.9 W/mm, with a power-added efficiency (PAE) of 40% at a drain bias of 83 V, was demonstrated.

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