Metal-oxide Resistive RAM (RRAM) is one of the most promising candidates for future non-volatile storage. Due to unique properties e.g., small footprint, ability to modulate the resistance, and CMOS compatibility, RRAM can be a fruitful candidate for analog design. However, recent literature only scratches the surface of this interesting prospect. In this paper, a single RRAM behavior is studied under variations from an analog design standpoint. We discuss four classes of analog circuits, namely, common source amplifier, differential amplifier, constant transconductance biasing circuit, and active low-pass filter as examples. For each class of circuit, we present a comparative analysis between design with a conventional resistor and design with an RRAM. Our study shows that blind swapping of passive resistors with RRAM can actually degrade the performance. We propose techniques such as usage of RRAM Low Resistance State to recover the loss. Simulation results indicate that RRAM based amplifiers can achieve 2X lower area, about 1.5X higher bandwidth with only 9% reduction in gain. Moreover, we show that the resistance modulation property can be applied to realize a source-degenerated amplifier with reconfigurable linearity, to a constant transconductance bias circuit to avoid resistance trimming, and to design a programmable active low-pass filter.
All Science Journal Classification (ASJC) codes
- Computer Science (miscellaneous)
- Information Systems
- Human-Computer Interaction
- Computer Science Applications