Reconfigurable electromagnetics devices enabled by a non-linear dopant drift memristor

Micah Dennis Gregory, Douglas Henry Werner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

An improved memristor model which incorporates a non-linear dopant drift model for the ionic barrier is employed in the design of reconfigurable electromagnetics devices. A finite-difference time-domain (FDTD) simulation tool is utilized to accurately model the devices under switching conditions while radio frequency (RF) signals are applied. A polarization-switchable patch antenna is designed using memristors to demonstrate their utility as a microwave switch.

Original languageEnglish (US)
Title of host publication2014 IEEE Antennas and Propagation Society International Symposium(APSURSI)
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages563-564
Number of pages2
ISBN (Electronic)9781479935406
DOIs
StatePublished - Sep 18 2014
Event2014 IEEE Antennas and Propagation Society International Symposium, APSURSI 2014 - Memphis, United States
Duration: Jul 6 2014Jul 11 2014

Other

Other2014 IEEE Antennas and Propagation Society International Symposium, APSURSI 2014
CountryUnited States
CityMemphis
Period7/6/147/11/14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Gregory, M. D., & Werner, D. H. (2014). Reconfigurable electromagnetics devices enabled by a non-linear dopant drift memristor. In 2014 IEEE Antennas and Propagation Society International Symposium(APSURSI) (pp. 563-564). [6904612] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APS.2014.6904612