Reconfigurable near-IR metasurface based on Ge2Sb2Te5 phase-change material

Alexej V. Pogrebnyakov, Jeremy A. Bossard, Jeremiah P. Turpin, J. David Musgraves, Hee Jung Shin, Clara Riverobaleine, Nikolas Podraza, Kathleen A. Richardson, Douglas H. Werner, Theresa S. Mayer

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Abstract

A reconfigurable metasurface made of Ge2Sb2Te5 phase-change material was experimentally demonstrated in the 1.55 μm wavelength range. A nanostructured Ge2Sb2Te5 film on fused silica substrate was optimized to switch from highly transmissive (80%) to highly absorptive (76%) modes with a 7:1 contrast ratio in transmission independent of polarization, when thermally transformed from the amorphous to crystalline state. The metasurface was designed using a genetic algorithm optimizer linked with an efficient fullwave electromagnetic solver.

Original languageEnglish (US)
Pages (from-to)2264-2275
Number of pages12
JournalOptical Materials Express
Volume8
Issue number8
DOIs
StatePublished - Aug 1 2018

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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    Pogrebnyakov, A. V., Bossard, J. A., Turpin, J. P., Musgraves, J. D., Shin, H. J., Riverobaleine, C., Podraza, N., Richardson, K. A., Werner, D. H., & Mayer, T. S. (2018). Reconfigurable near-IR metasurface based on Ge2Sb2Te5 phase-change material. Optical Materials Express, 8(8), 2264-2275. https://doi.org/10.1364/OME.8.002264