Abstract
This work presents a detailed study of the graphene RF mixer, comparing ambipolar and drain mixing for the first time. Output characteristics of the graphene transistor are analyzed and the effects of device scaling and interface state density on mixer performance are explained. We design a graphene RF transistor with gate length 750 nm, width 20 μm, and equivalent oxide thickness (EOT) ∼2.5 nm to achieve record high conversion gain of-14 and-16 dB at LO power 0 dBm at 4.2 and 10 GHz, respectively, 100x higher than previously reported ambipolar mixing.
Original language | English (US) |
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Title of host publication | 2012 IEEE International Electron Devices Meeting, IEDM 2012 |
DOIs | |
State | Published - 2012 |
Event | 2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: Dec 10 2012 → Dec 13 2012 |
Other
Other | 2012 IEEE International Electron Devices Meeting, IEDM 2012 |
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Country/Territory | United States |
City | San Francisco, CA |
Period | 12/10/12 → 12/13/12 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
- Materials Chemistry