Record high conversion gain ambipolar graphene mixer at 10GHz using scaled gate oxide

H. Madan, M. J. Hollander, M. Labella, R. Cavalero, David W. Snyder, Joshua Alexander Robinson, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

This work presents a detailed study of the graphene RF mixer, comparing ambipolar and drain mixing for the first time. Output characteristics of the graphene transistor are analyzed and the effects of device scaling and interface state density on mixer performance are explained. We design a graphene RF transistor with gate length 750 nm, width 20 μm, and equivalent oxide thickness (EOT) ∼2.5 nm to achieve record high conversion gain of-14 and-16 dB at LO power 0 dBm at 4.2 and 10 GHz, respectively, 100x higher than previously reported ambipolar mixing.

Original languageEnglish (US)
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
DOIs
StatePublished - 2012
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: Dec 10 2012Dec 13 2012

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period12/10/1212/13/12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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