Record high conversion gain ambipolar graphene mixer at 10GHz using scaled gate oxide

H. Madan; M. J. Hollander; M. Labella; R. Cavalero; David W. Snyder; Joshua Alexander Robinson; S. Datta

doi:10.1109/IEDM.2012.6478977

Record high conversion gain ambipolar graphene mixer at 10GHz using scaled gate oxide

H. Madan, M. J. Hollander, M. Labella, R. Cavalero, David W. Snyder, Joshua Alexander Robinson, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Scopus citations

Abstract

This work presents a detailed study of the graphene RF mixer, comparing ambipolar and drain mixing for the first time. Output characteristics of the graphene transistor are analyzed and the effects of device scaling and interface state density on mixer performance are explained. We design a graphene RF transistor with gate length 750 nm, width 20 μm, and equivalent oxide thickness (EOT) ∼2.5 nm to achieve record high conversion gain of-14 and-16 dB at LO power 0 dBm at 4.2 and 10 GHz, respectively, 100x higher than previously reported ambipolar mixing.

Original language	English (US)
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
DOIs	https://doi.org/10.1109/IEDM.2012.6478977
State	Published - 2012
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: Dec 10 2012 → Dec 13 2012

Other

Other	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country	United States
City	San Francisco, CA
Period	12/10/12 → 12/13/12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1109/IEDM.2012.6478977

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title = "Record high conversion gain ambipolar graphene mixer at 10GHz using scaled gate oxide",

abstract = "This work presents a detailed study of the graphene RF mixer, comparing ambipolar and drain mixing for the first time. Output characteristics of the graphene transistor are analyzed and the effects of device scaling and interface state density on mixer performance are explained. We design a graphene RF transistor with gate length 750 nm, width 20 μm, and equivalent oxide thickness (EOT) ∼2.5 nm to achieve record high conversion gain of-14 and-16 dB at LO power 0 dBm at 4.2 and 10 GHz, respectively, 100x higher than previously reported ambipolar mixing.",

author = "H. Madan and Hollander, {M. J.} and M. Labella and R. Cavalero and Snyder, {David W.} and Robinson, {Joshua Alexander} and S. Datta",

year = "2012",

doi = "10.1109/IEDM.2012.6478977",

language = "English (US)",

isbn = "9781467348706",

booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",

note = "2012 IEEE International Electron Devices Meeting, IEDM 2012 ; Conference date: 10-12-2012 Through 13-12-2012",

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Madan, H, Hollander, MJ, Labella, M, Cavalero, R, Snyder, DW , Robinson, JA & Datta, S 2012, Record high conversion gain ambipolar graphene mixer at 10GHz using scaled gate oxide. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6478977, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 12/10/12. https://doi.org/10.1109/IEDM.2012.6478977

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AU - Madan, H.

AU - Hollander, M. J.

AU - Labella, M.

AU - Cavalero, R.

AU - Snyder, David W.

AU - Robinson, Joshua Alexander

AU - Datta, S.

PY - 2012

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AB - This work presents a detailed study of the graphene RF mixer, comparing ambipolar and drain mixing for the first time. Output characteristics of the graphene transistor are analyzed and the effects of device scaling and interface state density on mixer performance are explained. We design a graphene RF transistor with gate length 750 nm, width 20 μm, and equivalent oxide thickness (EOT) ∼2.5 nm to achieve record high conversion gain of-14 and-16 dB at LO power 0 dBm at 4.2 and 10 GHz, respectively, 100x higher than previously reported ambipolar mixing.

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