Recovery-free electron spin resonance observations of NBTI degradation

J. T. Ryan, P. M. Lenahan, T. Grasser, H. Enichlmair

Research output: Chapter in Book/Report/Conference proceedingConference contribution

31 Scopus citations

Abstract

We have developed an approach to perform "on the fly" electron spin resonance (OTF-ESR) measurements of negative bias temperature instability (NBTI) defect generation. This OTF-ESR approach allows for an atomic-scale identification of the defects involved in NBTI free of any recovery contamination. We demonstrate that, during NBTI stressing at elevated temperature and modest negative oxide bias, positively charged oxygen vacancy sites (E′ centers) are generated. Upon removal of the NBTI stressing conditions, the E′ center density quickly recovers to that of its pre-stress values. When similar measurements are made with zero oxide bias at elevated temperature or negative oxide bias at room temperature, the E′ defect density does not change. These observations strongly indicate that NBTI is triggered by inversion layer hole capture at an E′ precursor site which then leads to the depassivation of nearby interface states.

Original languageEnglish (US)
Title of host publication2010 IEEE International Reliability Physics Symposium, IRPS 2010
Pages43-49
Number of pages7
DOIs
StatePublished - 2010
Event2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada
Duration: May 2 2010May 6 2010

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2010 IEEE International Reliability Physics Symposium, IRPS 2010
CountryCanada
CityGarden Grove, CA
Period5/2/105/6/10

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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