Recovery of original superconducting properties in ion-irradiated Y 1Ba2Cu3O7-x thin films

S. Vadlamannati, P. England, N. G. Stoffel, R. Ramesh, T. S. Ravi, D. M. Hwang, A. Findikoglu, Qi Li, T. Venkatesan, W. L. McLean

Research output: Contribution to journalArticle

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Abstract

The changes in the superconducting properties of in situ pulsed laser deposited Y1Ba2Cu3O7-x thin films caused by irradiation with 200 keV He+ ions are due to both oxygen loss as well as oxygen and cationic displacements induced by the irradiation. This is demonstrated by a study of the recovery of these defects by plasma oxidation and relatively low temperature (∼600°C) annealing in oxygen. Plasma oxidation of films irradiated to low fluences enables the replacement of oxygen atoms in the lattice, leading to a substantial recovery of Tc0, Jc, and normal state resistivity. Irradiation-induced oxygen and cationic displacements and other microscopic defects can be further annealed out at relatively low temperatures leading to an almost full recovery of Tc0, Jc, and normal state resistivity. A transmission electron microscope study of irradiated films shows evidence that they are structurally disordered.

Original languageEnglish (US)
Pages (from-to)2265-2267
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number21
DOIs
StatePublished - Dec 1 1990

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recovery
oxygen
thin films
irradiation
ions
oxidation
electrical resistivity
defects
oxygen atoms
pulsed lasers
fluence
electron microscopes
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Vadlamannati, S., England, P., Stoffel, N. G., Ramesh, R., Ravi, T. S., Hwang, D. M., ... McLean, W. L. (1990). Recovery of original superconducting properties in ion-irradiated Y 1Ba2Cu3O7-x thin films. Applied Physics Letters, 57(21), 2265-2267. https://doi.org/10.1063/1.104164
Vadlamannati, S. ; England, P. ; Stoffel, N. G. ; Ramesh, R. ; Ravi, T. S. ; Hwang, D. M. ; Findikoglu, A. ; Li, Qi ; Venkatesan, T. ; McLean, W. L. / Recovery of original superconducting properties in ion-irradiated Y 1Ba2Cu3O7-x thin films. In: Applied Physics Letters. 1990 ; Vol. 57, No. 21. pp. 2265-2267.
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Vadlamannati, S, England, P, Stoffel, NG, Ramesh, R, Ravi, TS, Hwang, DM, Findikoglu, A, Li, Q, Venkatesan, T & McLean, WL 1990, 'Recovery of original superconducting properties in ion-irradiated Y 1Ba2Cu3O7-x thin films', Applied Physics Letters, vol. 57, no. 21, pp. 2265-2267. https://doi.org/10.1063/1.104164

Recovery of original superconducting properties in ion-irradiated Y 1Ba2Cu3O7-x thin films. / Vadlamannati, S.; England, P.; Stoffel, N. G.; Ramesh, R.; Ravi, T. S.; Hwang, D. M.; Findikoglu, A.; Li, Qi; Venkatesan, T.; McLean, W. L.

In: Applied Physics Letters, Vol. 57, No. 21, 01.12.1990, p. 2265-2267.

Research output: Contribution to journalArticle

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AU - Vadlamannati, S.

AU - England, P.

AU - Stoffel, N. G.

AU - Ramesh, R.

AU - Ravi, T. S.

AU - Hwang, D. M.

AU - Findikoglu, A.

AU - Li, Qi

AU - Venkatesan, T.

AU - McLean, W. L.

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N2 - The changes in the superconducting properties of in situ pulsed laser deposited Y1Ba2Cu3O7-x thin films caused by irradiation with 200 keV He+ ions are due to both oxygen loss as well as oxygen and cationic displacements induced by the irradiation. This is demonstrated by a study of the recovery of these defects by plasma oxidation and relatively low temperature (∼600°C) annealing in oxygen. Plasma oxidation of films irradiated to low fluences enables the replacement of oxygen atoms in the lattice, leading to a substantial recovery of Tc0, Jc, and normal state resistivity. Irradiation-induced oxygen and cationic displacements and other microscopic defects can be further annealed out at relatively low temperatures leading to an almost full recovery of Tc0, Jc, and normal state resistivity. A transmission electron microscope study of irradiated films shows evidence that they are structurally disordered.

AB - The changes in the superconducting properties of in situ pulsed laser deposited Y1Ba2Cu3O7-x thin films caused by irradiation with 200 keV He+ ions are due to both oxygen loss as well as oxygen and cationic displacements induced by the irradiation. This is demonstrated by a study of the recovery of these defects by plasma oxidation and relatively low temperature (∼600°C) annealing in oxygen. Plasma oxidation of films irradiated to low fluences enables the replacement of oxygen atoms in the lattice, leading to a substantial recovery of Tc0, Jc, and normal state resistivity. Irradiation-induced oxygen and cationic displacements and other microscopic defects can be further annealed out at relatively low temperatures leading to an almost full recovery of Tc0, Jc, and normal state resistivity. A transmission electron microscope study of irradiated films shows evidence that they are structurally disordered.

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Vadlamannati S, England P, Stoffel NG, Ramesh R, Ravi TS, Hwang DM et al. Recovery of original superconducting properties in ion-irradiated Y 1Ba2Cu3O7-x thin films. Applied Physics Letters. 1990 Dec 1;57(21):2265-2267. https://doi.org/10.1063/1.104164