Reducing parasitic effects of actuation and sensing schemes for piezoelectric microelectromechanical resonators

F. Mathieu, F. Larramendy, D. Dezest, C. Huang, G. Lavallee, S. Miller, C. M. Eichfeld, W. Mansfield, S. Trolier-McKinstry, L. Nicu

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9 Scopus citations

Abstract

The co-integration of piezoelectric actuation and sensing capabilities on microelectromechanical systembased resonators can be a source of electrical cross-talk that, if not properly taken into account, may dramatically affect the interpretation of the device's output. In this paper, we identify three parasitic electrical effects pertaining to the most commonly used piezoelectric actuation and sensing schemes. To further investigate the impact of such parasitic effects, microcantilevers, bridges and membranes integrating a layer of sol-gel lead zirconate titanate (PZT) were fabricated and electrically characterized. Experimental results on the resonant characteristics were compared with simulations of the studied resonators' equivalent electrical models. Methods for reducing the design-dependent parasitic electrical effects such as mutual capacitances of less than 10 fF, electrical wiring or static capacitance mismatches of less than 20% of the integrated piezoelectric films are discussed.

Original languageEnglish (US)
Pages (from-to)68-76
Number of pages9
JournalMicroelectronic Engineering
Volume111
DOIs
StatePublished - Jan 1 2013

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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