Reduction of ohmic contact resistance of solid phase regrowth contacts to n-ingaas using a sulfur pretreatment

Joshua D. Yearsley; Joyce C. Lin; Suzanne E. Mohney

doi:10.1109/LED.2013.2274526

Reduction of ohmic contact resistance of solid phase regrowth contacts to n-ingaas using a sulfur pretreatment

Joshua D. Yearsley, Joyce C. Lin, Suzanne E. Mohney

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5 Scopus citations

Abstract

We report an Ohmic contact to lightly doped (5× 10¹⁷ cm^-3) n-In _0.53 Ga_0.47 As with a specific contact resistance of =2.6× 10^-8± 1.7× 10 ^-8Ω-cm², rivaling the lowest reported values on n-In_0.53 Ga_0.47 As with significantly higher original dopant concentrations (>1× 10¹⁹ cm^-3) than the epilayer used in this letter. This reduction of ρ_c was achieved using the combination of a Pd/Si-based solid phase regrowth (SPR) contact with an ammonium sulfide surface treatment before contact deposition. Transmission electron microscopy confirmed that the SPR mechanism still occurred when the ammonium sulfide treatment was used. Both the SPR and sulfide-treated SPR cases reduced ρ_c versus a Pd/Ti/Au contact. For comparison, a sulfide-treated Pd/Ti/Au contact that does not undergo SPR was fabricated, and it did not have a lower _c compared with the same contact without the sulfide treatment. This discrepancy indicates that SPR is essential for benefiting from the sulfide treatment.

Original language	English (US)
Article number	6579644
Pages (from-to)	1184-1186
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	9
DOIs	https://doi.org/10.1109/LED.2013.2274526
State	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2013.2274526

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title = "Reduction of ohmic contact resistance of solid phase regrowth contacts to n-ingaas using a sulfur pretreatment",

abstract = "We report an Ohmic contact to lightly doped (5× 1017 cm-3) n-In 0.53 Ga0.47 As with a specific contact resistance of =2.6× 10-8± 1.7× 10 -8Ω-cm2, rivaling the lowest reported values on n-In0.53 Ga0.47 As with significantly higher original dopant concentrations (>1× 1019 cm-3) than the epilayer used in this letter. This reduction of ρc was achieved using the combination of a Pd/Si-based solid phase regrowth (SPR) contact with an ammonium sulfide surface treatment before contact deposition. Transmission electron microscopy confirmed that the SPR mechanism still occurred when the ammonium sulfide treatment was used. Both the SPR and sulfide-treated SPR cases reduced ρc versus a Pd/Ti/Au contact. For comparison, a sulfide-treated Pd/Ti/Au contact that does not undergo SPR was fabricated, and it did not have a lower c compared with the same contact without the sulfide treatment. This discrepancy indicates that SPR is essential for benefiting from the sulfide treatment.",

author = "Yearsley, {Joshua D.} and Lin, {Joyce C.} and Mohney, {Suzanne E.}",

year = "2013",

doi = "10.1109/LED.2013.2274526",

language = "English (US)",

volume = "34",

pages = "1184--1186",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

TY - JOUR

T1 - Reduction of ohmic contact resistance of solid phase regrowth contacts to n-ingaas using a sulfur pretreatment

AU - Yearsley, Joshua D.

AU - Lin, Joyce C.

AU - Mohney, Suzanne E.

PY - 2013

Y1 - 2013

N2 - We report an Ohmic contact to lightly doped (5× 1017 cm-3) n-In 0.53 Ga0.47 As with a specific contact resistance of =2.6× 10-8± 1.7× 10 -8Ω-cm2, rivaling the lowest reported values on n-In0.53 Ga0.47 As with significantly higher original dopant concentrations (>1× 1019 cm-3) than the epilayer used in this letter. This reduction of ρc was achieved using the combination of a Pd/Si-based solid phase regrowth (SPR) contact with an ammonium sulfide surface treatment before contact deposition. Transmission electron microscopy confirmed that the SPR mechanism still occurred when the ammonium sulfide treatment was used. Both the SPR and sulfide-treated SPR cases reduced ρc versus a Pd/Ti/Au contact. For comparison, a sulfide-treated Pd/Ti/Au contact that does not undergo SPR was fabricated, and it did not have a lower c compared with the same contact without the sulfide treatment. This discrepancy indicates that SPR is essential for benefiting from the sulfide treatment.

AB - We report an Ohmic contact to lightly doped (5× 1017 cm-3) n-In 0.53 Ga0.47 As with a specific contact resistance of =2.6× 10-8± 1.7× 10 -8Ω-cm2, rivaling the lowest reported values on n-In0.53 Ga0.47 As with significantly higher original dopant concentrations (>1× 1019 cm-3) than the epilayer used in this letter. This reduction of ρc was achieved using the combination of a Pd/Si-based solid phase regrowth (SPR) contact with an ammonium sulfide surface treatment before contact deposition. Transmission electron microscopy confirmed that the SPR mechanism still occurred when the ammonium sulfide treatment was used. Both the SPR and sulfide-treated SPR cases reduced ρc versus a Pd/Ti/Au contact. For comparison, a sulfide-treated Pd/Ti/Au contact that does not undergo SPR was fabricated, and it did not have a lower c compared with the same contact without the sulfide treatment. This discrepancy indicates that SPR is essential for benefiting from the sulfide treatment.

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U2 - 10.1109/LED.2013.2274526

DO - 10.1109/LED.2013.2274526

M3 - Article

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SN - 0741-3106

VL - 34

SP - 1184

EP - 1186

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 6579644

ER -

Reduction of ohmic contact resistance of solid phase regrowth contacts to n-ingaas using a sulfur pretreatment

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