Reentrant topological phases in Mn-doped HgTe quantum wells

W. Beugeling; C. X. Liu; E. G. Novik; L. W. Molenkamp; C. Morais Smith

doi:10.1103/PhysRevB.85.195304

Reentrant topological phases in Mn-doped HgTe quantum wells

W. Beugeling, C. X. Liu, E. G. Novik, L. W. Molenkamp, C. Morais Smith

Physics

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Quantum wells of HgTe doped with Mn display the quantum anomalous Hall effect due to the magnetic moments of the Mn ions. In the presence of a magnetic field, these magnetic moments induce an effective nonlinear Zeeman effect, causing a nonmonotonic bending of the Landau levels. As a consequence, the quantized (spin) Hall conductivity exhibits a reentrant behavior as one increases the magnetic field. Here, we will discuss the appearance of different types of reentrant behavior as a function of Mn concentration, well thickness, and temperature, based on the qualitative form of the Landau-level spectrum in an effective four-band model.

Original language	English (US)
Article number	195304
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	85
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.85.195304
State	Published - May 4 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1103/PhysRevB.85.195304

Cite this

@article{1623056f17a94c16940e9de1bc925149,

title = "Reentrant topological phases in Mn-doped HgTe quantum wells",

abstract = "Quantum wells of HgTe doped with Mn display the quantum anomalous Hall effect due to the magnetic moments of the Mn ions. In the presence of a magnetic field, these magnetic moments induce an effective nonlinear Zeeman effect, causing a nonmonotonic bending of the Landau levels. As a consequence, the quantized (spin) Hall conductivity exhibits a reentrant behavior as one increases the magnetic field. Here, we will discuss the appearance of different types of reentrant behavior as a function of Mn concentration, well thickness, and temperature, based on the qualitative form of the Landau-level spectrum in an effective four-band model.",

author = "W. Beugeling and Liu, {C. X.} and Novik, {E. G.} and Molenkamp, {L. W.} and {Morais Smith}, C.",

year = "2012",

month = may,

day = "4",

doi = "10.1103/PhysRevB.85.195304",

language = "English (US)",

volume = "85",

journal = "Physical Review B-Condensed Matter",

issn = "1098-0121",

publisher = "American Physical Society",

number = "19",

}

TY - JOUR

T1 - Reentrant topological phases in Mn-doped HgTe quantum wells

AU - Beugeling, W.

AU - Liu, C. X.

AU - Novik, E. G.

AU - Molenkamp, L. W.

AU - Morais Smith, C.

PY - 2012/5/4

Y1 - 2012/5/4

N2 - Quantum wells of HgTe doped with Mn display the quantum anomalous Hall effect due to the magnetic moments of the Mn ions. In the presence of a magnetic field, these magnetic moments induce an effective nonlinear Zeeman effect, causing a nonmonotonic bending of the Landau levels. As a consequence, the quantized (spin) Hall conductivity exhibits a reentrant behavior as one increases the magnetic field. Here, we will discuss the appearance of different types of reentrant behavior as a function of Mn concentration, well thickness, and temperature, based on the qualitative form of the Landau-level spectrum in an effective four-band model.

AB - Quantum wells of HgTe doped with Mn display the quantum anomalous Hall effect due to the magnetic moments of the Mn ions. In the presence of a magnetic field, these magnetic moments induce an effective nonlinear Zeeman effect, causing a nonmonotonic bending of the Landau levels. As a consequence, the quantized (spin) Hall conductivity exhibits a reentrant behavior as one increases the magnetic field. Here, we will discuss the appearance of different types of reentrant behavior as a function of Mn concentration, well thickness, and temperature, based on the qualitative form of the Landau-level spectrum in an effective four-band model.

UR - http://www.scopus.com/inward/record.url?scp=84861175236&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861175236&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.85.195304

DO - 10.1103/PhysRevB.85.195304

M3 - Article

AN - SCOPUS:84861175236

VL - 85

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 19

M1 - 195304

ER -

Reentrant topological phases in Mn-doped HgTe quantum wells

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this