Relationship between strained silicon-oxygen bonds and radiation induced paramagnetic point defects in silicon dioxide

W. L. Warren, Patrick M. Lenahan, C. J. Brinker

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We have investigated the radiation induced generation of paramagnetic point defects in high surface area sol-gel silicates containing various concentrations of the Raman active 608 cm-1 D2 band attributed to strained cyclic trisiloxanes (3-membered rings). Our results suggest a correlation between the concentration of the 3-membered rings with the concentration of radiation induced paramagnetic E' (trivalent silicon center) and oxygen centers, thus, providing the first substantive evidence of the relationship between a specific strained siloxane structure and radiation damage in amorphous silicon dioxide.

Original languageEnglish (US)
Pages (from-to)137-141
Number of pages5
JournalSolid State Communications
Volume79
Issue number2
DOIs
StatePublished - Jan 1 1991

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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