We have investigated the radiation induced generation of paramagnetic point defects in high surface area sol-gel silicates containing various concentrations of the Raman active 608 cm-1 D2 band attributed to strained cyclic trisiloxanes (3-membered rings). Our results suggest a correlation between the concentration of the 3-membered rings with the concentration of radiation induced paramagnetic E' (trivalent silicon center) and oxygen centers, thus, providing the first substantive evidence of the relationship between a specific strained siloxane structure and radiation damage in amorphous silicon dioxide.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry