Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination

James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis, Mark A. Anders

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we utilize electrically detected magnetic resonance via the bipolar amplification effect to explore the physical and chemical nature of defects at the 4H-SiC/SiO2 interface in metal-oxide-semiconductor field effect transistors. Defects at and very near the 4H-SiC/SiO2 interface are involved in bias temperature instabilities in 4H-SiC transistor technology. Of particular relevance to reliability physics, our results indicate that oxygen deficient silicon atoms in the near-interface oxide, known as E' centers, can be greatly reduced utilizing nitric oxide and barium annealing. E' centers have been directly linked to bias temperature instabilities in 4H-SiC technology.

Original languageEnglish (US)
Title of host publication2019 IEEE International Reliability Physics Symposium, IRPS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538695043
DOIs
StatePublished - May 22 2019
Event2019 IEEE International Reliability Physics Symposium, IRPS 2019 - Monterey, United States
Duration: Mar 31 2019Apr 4 2019

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2019-March
ISSN (Print)1541-7026

Conference

Conference2019 IEEE International Reliability Physics Symposium, IRPS 2019
CountryUnited States
CityMonterey
Period3/31/194/4/19

Fingerprint

Defects
Nitric oxide
MOSFET devices
Magnetic resonance
Barium
Amplification
Transistors
Physics
Annealing
Silicon
Atoms
Temperature
Oxides
Oxygen

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Ashton, J. P., Lenahan, P. M., Lichtenwalner, D. J., Lelis, A. J., & Anders, M. A. (2019). Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination. In 2019 IEEE International Reliability Physics Symposium, IRPS 2019 [8720423] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2019-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2019.8720423
Ashton, James P. ; Lenahan, Patrick M. ; Lichtenwalner, Daniel J. ; Lelis, Aivars J. ; Anders, Mark A. / Reliability and Performance Issues in SiC MOSFETs : Insight Provided by Spin Dependent Recombination. 2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (IEEE International Reliability Physics Symposium Proceedings).
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abstract = "In this work, we utilize electrically detected magnetic resonance via the bipolar amplification effect to explore the physical and chemical nature of defects at the 4H-SiC/SiO2 interface in metal-oxide-semiconductor field effect transistors. Defects at and very near the 4H-SiC/SiO2 interface are involved in bias temperature instabilities in 4H-SiC transistor technology. Of particular relevance to reliability physics, our results indicate that oxygen deficient silicon atoms in the near-interface oxide, known as E' centers, can be greatly reduced utilizing nitric oxide and barium annealing. E' centers have been directly linked to bias temperature instabilities in 4H-SiC technology.",
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Ashton, JP, Lenahan, PM, Lichtenwalner, DJ, Lelis, AJ & Anders, MA 2019, Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination. in 2019 IEEE International Reliability Physics Symposium, IRPS 2019., 8720423, IEEE International Reliability Physics Symposium Proceedings, vol. 2019-March, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, United States, 3/31/19. https://doi.org/10.1109/IRPS.2019.8720423

Reliability and Performance Issues in SiC MOSFETs : Insight Provided by Spin Dependent Recombination. / Ashton, James P.; Lenahan, Patrick M.; Lichtenwalner, Daniel J.; Lelis, Aivars J.; Anders, Mark A.

2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8720423 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Ashton JP, Lenahan PM, Lichtenwalner DJ, Lelis AJ, Anders MA. Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination. In 2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8720423. (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2019.8720423