Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination

James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis, Mark A. Anders

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we utilize electrically detected magnetic resonance via the bipolar amplification effect to explore the physical and chemical nature of defects at the 4H-SiC/SiO2 interface in metal-oxide-semiconductor field effect transistors. Defects at and very near the 4H-SiC/SiO2 interface are involved in bias temperature instabilities in 4H-SiC transistor technology. Of particular relevance to reliability physics, our results indicate that oxygen deficient silicon atoms in the near-interface oxide, known as E' centers, can be greatly reduced utilizing nitric oxide and barium annealing. E' centers have been directly linked to bias temperature instabilities in 4H-SiC technology.

Original languageEnglish (US)
Title of host publication2019 IEEE International Reliability Physics Symposium, IRPS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538695043
DOIs
StatePublished - May 22 2019
Event2019 IEEE International Reliability Physics Symposium, IRPS 2019 - Monterey, United States
Duration: Mar 31 2019Apr 4 2019

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2019-March
ISSN (Print)1541-7026

Conference

Conference2019 IEEE International Reliability Physics Symposium, IRPS 2019
CountryUnited States
CityMonterey
Period3/31/194/4/19

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Ashton, J. P., Lenahan, P. M., Lichtenwalner, D. J., Lelis, A. J., & Anders, M. A. (2019). Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination. In 2019 IEEE International Reliability Physics Symposium, IRPS 2019 [8720423] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2019-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2019.8720423