Reliability and performance limiting defects in low-κ; dielectrics for use as interlayer dielectrics

B. C. Bittel, Patrick M. Lenahan, S. King

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Reliability issues of low-κ; dielectric thin films are important problems in present day ULSI development.1-6 Leakage currents in general as well as reliability issues such as time dependent dielectric breakdown (TDDM) and stress induced leakage currents (SILC) are critical problems that are not yet well understood. A topic of current interest is ultraviolet light curing (UV curing) of low-k materials.5,6An atomic scale understanding of the defects involved in reliability problems of these films is virtually non-existent. We have initiated a study utilizing electron spin resonance (ESR) and electrical measurements which provides some fundamental understanding of the deep level defects likely involved in these reliability problems.

Original languageEnglish (US)
Title of host publication2010 IEEE International Reliability Physics Symposium, IRPS 2010
Pages947-950
Number of pages4
DOIs
StatePublished - Oct 20 2010
Event2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada
Duration: May 2 2010May 6 2010

Other

Other2010 IEEE International Reliability Physics Symposium, IRPS 2010
CountryCanada
CityGarden Grove, CA
Period5/2/105/6/10

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Bittel, B. C., Lenahan, P. M., & King, S. (2010). Reliability and performance limiting defects in low-κ; dielectrics for use as interlayer dielectrics. In 2010 IEEE International Reliability Physics Symposium, IRPS 2010 (pp. 947-950). [5488701] https://doi.org/10.1109/IRPS.2010.5488701