Reliability concerns for HfO2/Si (and (ZrO2/Si) systems: Interface and dielectric traps

A. Y. Kang, Patrick M. Lenahan, J. F. Vonley, Y. Ono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


We report on electron photo-injection results in HfO2 films using capacitance vs. voltage (CV) and electron spin resonance measurements. CV measurements indicate presence of pre-existing large capture cross section electron traps. Electron spin resonance measurements indicate trapped electrons in the form of O-2 superoxide ions. Another center, likely a Hf+3 center, is also observed.

Original languageEnglish (US)
Title of host publication2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780381572
StatePublished - Jan 1 2003
Event2003 IEEE International Integrated Reliability Workshop, IRW 2003 - Lake Tahoe, United States
Duration: Oct 20 2003Oct 23 2003


Other2003 IEEE International Integrated Reliability Workshop, IRW 2003
CountryUnited States
CityLake Tahoe

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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