Reliability concerns for HfO2/Si (and (ZrO2/Si) systems: Interface and dielectric traps

A. Y. Kang, Patrick M. Lenahan, J. F. Vonley, Y. Ono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We report on electron photo-injection results in HfO2 films using capacitance vs. voltage (CV) and electron spin resonance measurements. CV measurements indicate presence of pre-existing large capture cross section electron traps. Electron spin resonance measurements indicate trapped electrons in the form of O-2 superoxide ions. Another center, likely a Hf+3 center, is also observed.

Original languageEnglish (US)
Title of host publication2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages24-27
Number of pages4
Volume2003-January
ISBN (Electronic)0780381572
DOIs
StatePublished - Jan 1 2003
Event2003 IEEE International Integrated Reliability Workshop, IRW 2003 - Lake Tahoe, United States
Duration: Oct 20 2003Oct 23 2003

Other

Other2003 IEEE International Integrated Reliability Workshop, IRW 2003
CountryUnited States
CityLake Tahoe
Period10/20/0310/23/03

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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    Kang, A. Y., Lenahan, P. M., Vonley, J. F., & Ono, Y. (2003). Reliability concerns for HfO2/Si (and (ZrO2/Si) systems: Interface and dielectric traps. In 2003 IEEE International Integrated Reliability Workshop Final Report, IRW 2003 (Vol. 2003-January, pp. 24-27). [1283294] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRWS.2003.1283294