Reliability concerns for HfO2/Si devices: Interface and dielectric traps

Andrew Y. Kang, Patrick M. Lenahan, John F. Conley

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We have initiated a study of atomic scale defects which may play important roles in the reliability physics of a leading high dielectric constant/Si system: atomic layer deposition (ALD) HfO2 on silicon. We have utilized capacitance versus voltage and electron spin resonance measurements to explore electrically active defects in ALD HfO2/Si device structures. We have subjected some of these structures to either vacuum ultraviolet (VUV) illumination or gamma irradiation. The VUV illumination and gamma irradiation flood the dielectric with electrons and holes. Post irradiation measurements most strongly indicate the presence of high densities of large capture cross section electron traps. Electron spin resonance measurements clearly indicate the presence of silicon dangling bond interface defects which are similar to but not identical to the silicon dangling bonds observed at conventional Si/SiO2 interfaces.

Original languageEnglish (US)
Title of host publication2002 IEEE International Integrated Reliability Workshop Final Report, IRW 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages102-107
Number of pages6
ISBN (Electronic)0780375580
DOIs
StatePublished - Jan 1 2002
EventIEEE International Integrated Reliability Workshop Final Report, IRW 2002 - Lake Tahoe, United States
Duration: Oct 21 2002Oct 24 2002

Publication series

NameIEEE International Integrated Reliability Workshop Final Report
Volume2002-January

Other

OtherIEEE International Integrated Reliability Workshop Final Report, IRW 2002
CountryUnited States
CityLake Tahoe
Period10/21/0210/24/02

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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