Reliability of III-V devices - The defects that cause the trouble

Sokrates T. Pantelides, Yevgeniy Puzyrev, Xiao Shen, Tania Roy, Sandeepan Dasgupta, Blair R. Tuttle, Daniel M. Fleetwood, Ronald D. Schrimpf

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

Degradation of electronic devices by hot electrons is universally attributed to the generation of defects, but the mechanisms for defect generation and the specific nature of the pertinent defects are not known for most systems. Here we describe three recent case studies in III-V high-electron-mobility transistors that illustrate the power of combining density functional calculations and experimental data to identify the pertinent defects and associated degradation mechanisms. In all cases, benign pre-existing defects are either depassivated (irreversible degradation) or transformed to a metastable state (reversible degradation).

Original languageEnglish (US)
Pages (from-to)3-8
Number of pages6
JournalMicroelectronic Engineering
Volume90
DOIs
StatePublished - Feb 1 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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  • Cite this

    Pantelides, S. T., Puzyrev, Y., Shen, X., Roy, T., Dasgupta, S., Tuttle, B. R., Fleetwood, D. M., & Schrimpf, R. D. (2012). Reliability of III-V devices - The defects that cause the trouble. Microelectronic Engineering, 90, 3-8. https://doi.org/10.1016/j.mee.2011.04.019