Reliable bonding using indium based solders

Jongpil Cheong, Abhijat Goyal, Srinivas A. Tadigadapa, Christopher D. Rahn

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

Low temperature bonding techniques with high bond strengths and reliability are required for the fabrication and packaging of MEMS devices. Indium and indium-tin based bonding processes are explored for the fabrication of a flextensional MEMS actuator, which requires the integration of lead zirconate titanate (PZT) substrate with a silicon micromachined structure at low temperatures. The developed technique can be used either for wafer or chip level bonding. The lithographic steps used for the patterning and delineation of the seed layer limit the resolution of this technique. Using this technique, reliable bonds were achieved at a temperature of 200°C. The bonds yielded an average tensile strength of 5.41 MPa and 7.38 MPa for samples using indium and indium-tin alloy solders as the intermediate bonding layers respectively. The bonds (with line width of 100 microns) showed hermetic sealing capability of better than 10 -11 mbar-l/s when tested using a commercial helium leak tester.

Original languageEnglish (US)
Pages (from-to)114-120
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5343
DOIs
StatePublished - May 10 2004
EventReliability, Testing, and Characterization of MEMS/MOEMS III - San Jose, CA., United States
Duration: Jan 26 2004Jan 28 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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