Removal of surface organic contaminants during thermal oxidation of silicon

Sylvia D. Hossain, Carlo G. Pantano, Jerzy Ruzyllo

Research output: Contribution to journalConference article

Abstract

The behavior of surface hydrocarbons and carbon during thermal oxidation of silicon is studied. It was established that organic contaminants are readily volatilized and do not affect, in a significant manner, the oxidation kinetics only in the case when the silicon surface during contamination is covered with an oxide at least 5 to 10 Angstrom thick. The organic removal process is substantially more effective at the higher temperatures of oxidation (900°C and above) than at the low temperature of 700°C. In the latter case, a noticeable disruption of the oxidation kinetics due to organic contaminants was observed for hydrophobic surfaces, or surfaces subjected to HF step last.

Original languageEnglish (US)
Pages (from-to)341-356
Number of pages16
JournalProceedings - The Electrochemical Society
Volume90
Issue number9
StatePublished - Dec 1 1990
EventProcedings of the First International Symposium on Cleaning Technology in Semiconductor Device Manufacturing (held at the 176th Meeting of the Electrochemical Society) - Hollywood, FL, USA
Duration: Oct 15 1989Oct 20 1989

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

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