Removal of surface organic contaminants during thermal oxidation of silicon

Sylvia D. Hossain, Carlo G. Pantano, Jerzy Ruzyllo

Research output: Contribution to journalConference articlepeer-review

Abstract

The behavior of surface hydrocarbons and carbon during thermal oxidation of silicon is studied. It was established that organic contaminants are readily volatilized and do not affect, in a significant manner, the oxidation kinetics only in the case when the silicon surface during contamination is covered with an oxide at least 5 to 10 Angstrom thick. The organic removal process is substantially more effective at the higher temperatures of oxidation (900°C and above) than at the low temperature of 700°C. In the latter case, a noticeable disruption of the oxidation kinetics due to organic contaminants was observed for hydrophobic surfaces, or surfaces subjected to HF step last.

Original languageEnglish (US)
Pages (from-to)341-356
Number of pages16
JournalProceedings - The Electrochemical Society
Volume90
Issue number9
StatePublished - Dec 1 1990
EventProcedings of the First International Symposium on Cleaning Technology in Semiconductor Device Manufacturing (held at the 176th Meeting of the Electrochemical Society) - Hollywood, FL, USA
Duration: Oct 15 1989Oct 20 1989

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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