Research on an improved DC-side snubber for suppressing the turn-off overvoltage and oscillation in high speed SiC MOSFET application

Mei Liang, Yan Li, Qian Chen, Yi Lu, Haihong Yu, Trillion Q. Zheng, Haobo Guo, Fangwei Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Due to the high switching speed of SiC MOSFET, the parasitic parameters and the low damping in the circuit, the turn-off overvoltage and oscillation of the freewheeling diode and SiC MOSFET are very severe. Based on the terminal impedances during the turn-off transition of the freewheeling diode and SiC MOSFET, the mechanism of the turn-off overvoltage and oscillation are analyzed and the suppressing method is researched in this paper. The DC-side snubber, which is the high-frequency decoupling capacitor in parallel with the phase-leg configuration, is a simple suppressing method but will lead to the low-frequency oscillation overlaying the high-frequency oscillation on the turn-off voltage. In order to improve the suppressing effectiveness of the simple DC-side snubber to suppress the low-frequency oscillation on the turn-off voltage, this paper proposes an improved DC-side snubber, which is the high-frequency decoupling capacitor in parallel with the capacitor-damping branch. The theoretical derivation and simulation of the improved DC-side snubber are presented. Finally, the experimental verification is carried out based on the double-pulse test circuit to prove the validity and effectiveness.

Original languageEnglish (US)
Title of host publication2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1358-1365
Number of pages8
ISBN (Electronic)9781509029983
DOIs
StatePublished - Nov 3 2017
Event9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017 - Cincinnati, United States
Duration: Oct 1 2017Oct 5 2017

Publication series

Name2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
Volume2017-January

Other

Other9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017
CountryUnited States
CityCincinnati
Period10/1/1710/5/17

Fingerprint

MOSFET
High Speed
Capacitors
Oscillation
Capacitor
Diodes
Damping
Decoupling
Diode
Networks (circuits)
Electric potential
Low Frequency
Voltage
Impedance
Branch
Configuration
Simulation

All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Renewable Energy, Sustainability and the Environment
  • Control and Optimization

Cite this

Liang, M., Li, Y., Chen, Q., Lu, Y., Yu, H., Zheng, T. Q., ... Zhao, F. (2017). Research on an improved DC-side snubber for suppressing the turn-off overvoltage and oscillation in high speed SiC MOSFET application. In 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017 (pp. 1358-1365). [8095948] (2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE.2017.8095948
Liang, Mei ; Li, Yan ; Chen, Qian ; Lu, Yi ; Yu, Haihong ; Zheng, Trillion Q. ; Guo, Haobo ; Zhao, Fangwei. / Research on an improved DC-side snubber for suppressing the turn-off overvoltage and oscillation in high speed SiC MOSFET application. 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1358-1365 (2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017).
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title = "Research on an improved DC-side snubber for suppressing the turn-off overvoltage and oscillation in high speed SiC MOSFET application",
abstract = "Due to the high switching speed of SiC MOSFET, the parasitic parameters and the low damping in the circuit, the turn-off overvoltage and oscillation of the freewheeling diode and SiC MOSFET are very severe. Based on the terminal impedances during the turn-off transition of the freewheeling diode and SiC MOSFET, the mechanism of the turn-off overvoltage and oscillation are analyzed and the suppressing method is researched in this paper. The DC-side snubber, which is the high-frequency decoupling capacitor in parallel with the phase-leg configuration, is a simple suppressing method but will lead to the low-frequency oscillation overlaying the high-frequency oscillation on the turn-off voltage. In order to improve the suppressing effectiveness of the simple DC-side snubber to suppress the low-frequency oscillation on the turn-off voltage, this paper proposes an improved DC-side snubber, which is the high-frequency decoupling capacitor in parallel with the capacitor-damping branch. The theoretical derivation and simulation of the improved DC-side snubber are presented. Finally, the experimental verification is carried out based on the double-pulse test circuit to prove the validity and effectiveness.",
author = "Mei Liang and Yan Li and Qian Chen and Yi Lu and Haihong Yu and Zheng, {Trillion Q.} and Haobo Guo and Fangwei Zhao",
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Liang, M, Li, Y, Chen, Q, Lu, Y, Yu, H, Zheng, TQ, Guo, H & Zhao, F 2017, Research on an improved DC-side snubber for suppressing the turn-off overvoltage and oscillation in high speed SiC MOSFET application. in 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017., 8095948, 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 1358-1365, 9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017, Cincinnati, United States, 10/1/17. https://doi.org/10.1109/ECCE.2017.8095948

Research on an improved DC-side snubber for suppressing the turn-off overvoltage and oscillation in high speed SiC MOSFET application. / Liang, Mei; Li, Yan; Chen, Qian; Lu, Yi; Yu, Haihong; Zheng, Trillion Q.; Guo, Haobo; Zhao, Fangwei.

2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1358-1365 8095948 (2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Research on an improved DC-side snubber for suppressing the turn-off overvoltage and oscillation in high speed SiC MOSFET application

AU - Liang, Mei

AU - Li, Yan

AU - Chen, Qian

AU - Lu, Yi

AU - Yu, Haihong

AU - Zheng, Trillion Q.

AU - Guo, Haobo

AU - Zhao, Fangwei

PY - 2017/11/3

Y1 - 2017/11/3

N2 - Due to the high switching speed of SiC MOSFET, the parasitic parameters and the low damping in the circuit, the turn-off overvoltage and oscillation of the freewheeling diode and SiC MOSFET are very severe. Based on the terminal impedances during the turn-off transition of the freewheeling diode and SiC MOSFET, the mechanism of the turn-off overvoltage and oscillation are analyzed and the suppressing method is researched in this paper. The DC-side snubber, which is the high-frequency decoupling capacitor in parallel with the phase-leg configuration, is a simple suppressing method but will lead to the low-frequency oscillation overlaying the high-frequency oscillation on the turn-off voltage. In order to improve the suppressing effectiveness of the simple DC-side snubber to suppress the low-frequency oscillation on the turn-off voltage, this paper proposes an improved DC-side snubber, which is the high-frequency decoupling capacitor in parallel with the capacitor-damping branch. The theoretical derivation and simulation of the improved DC-side snubber are presented. Finally, the experimental verification is carried out based on the double-pulse test circuit to prove the validity and effectiveness.

AB - Due to the high switching speed of SiC MOSFET, the parasitic parameters and the low damping in the circuit, the turn-off overvoltage and oscillation of the freewheeling diode and SiC MOSFET are very severe. Based on the terminal impedances during the turn-off transition of the freewheeling diode and SiC MOSFET, the mechanism of the turn-off overvoltage and oscillation are analyzed and the suppressing method is researched in this paper. The DC-side snubber, which is the high-frequency decoupling capacitor in parallel with the phase-leg configuration, is a simple suppressing method but will lead to the low-frequency oscillation overlaying the high-frequency oscillation on the turn-off voltage. In order to improve the suppressing effectiveness of the simple DC-side snubber to suppress the low-frequency oscillation on the turn-off voltage, this paper proposes an improved DC-side snubber, which is the high-frequency decoupling capacitor in parallel with the capacitor-damping branch. The theoretical derivation and simulation of the improved DC-side snubber are presented. Finally, the experimental verification is carried out based on the double-pulse test circuit to prove the validity and effectiveness.

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M3 - Conference contribution

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T3 - 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017

SP - 1358

EP - 1365

BT - 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Liang M, Li Y, Chen Q, Lu Y, Yu H, Zheng TQ et al. Research on an improved DC-side snubber for suppressing the turn-off overvoltage and oscillation in high speed SiC MOSFET application. In 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1358-1365. 8095948. (2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017). https://doi.org/10.1109/ECCE.2017.8095948