Research on precise test method for switching performance of high speed SiC MOSFET

Mei Liang, Yan Li, Trillion Q. Zheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In order to precisely test the switching performance of high speed SiC MOSFET, this paper researches the test method. The simulation switching waveforms considering the parasitic inductors are compared to the switching waveforms without considering the parasitic inductors in this paper. The distinctions of comparative results are obvious and prove the effects of parasitic inductors on switching performance should not be neglected. Concerning the passive voltage, the bandwidth and the parasitic inductor in the grounding lead can affect the tested results. This paper compares the switching waveforms tested by three passive voltage probes, the bandwidth of which are 150MHz, 300MHz and 500MHz, respectively. This paper compares the switching waveforms tested by the BNC adapter, the grounding spring and the grounding lead. When testing the switching current, the coaxial shunt, the sample resistor, the split core current probe or the current transformer can be employed. This paper compares the switching waveforms tested by four kinds of current test equipment. In addition, test points are also important for testing the switching performance of high speed SiC MOSFET precisely, and this paper compares the switching waveforms at different test points.

Original languageEnglish (US)
Title of host publication2016 Asian Conference on Energy, Power and Transportation Electrification, ACEPT 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509061730
DOIs
StatePublished - Jan 9 2017
Event2016 Asian Conference on Energy, Power and Transportation Electrification, ACEPT 2016 - Singapore, Singapore
Duration: Oct 25 2016Oct 27 2016

Publication series

Name2016 Asian Conference on Energy, Power and Transportation Electrification, ACEPT 2016

Conference

Conference2016 Asian Conference on Energy, Power and Transportation Electrification, ACEPT 2016
CountrySingapore
CitySingapore
Period10/25/1610/27/16

Fingerprint

performance
Electric grounding
Lead
Bandwidth
Electric instrument transformers
simulation
Testing
Electric potential
Resistors

All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Automotive Engineering
  • Transportation

Cite this

Liang, M., Li, Y., & Zheng, T. Q. (2017). Research on precise test method for switching performance of high speed SiC MOSFET. In 2016 Asian Conference on Energy, Power and Transportation Electrification, ACEPT 2016 [7811546] (2016 Asian Conference on Energy, Power and Transportation Electrification, ACEPT 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ACEPT.2016.7811546
Liang, Mei ; Li, Yan ; Zheng, Trillion Q. / Research on precise test method for switching performance of high speed SiC MOSFET. 2016 Asian Conference on Energy, Power and Transportation Electrification, ACEPT 2016. Institute of Electrical and Electronics Engineers Inc., 2017. (2016 Asian Conference on Energy, Power and Transportation Electrification, ACEPT 2016).
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abstract = "In order to precisely test the switching performance of high speed SiC MOSFET, this paper researches the test method. The simulation switching waveforms considering the parasitic inductors are compared to the switching waveforms without considering the parasitic inductors in this paper. The distinctions of comparative results are obvious and prove the effects of parasitic inductors on switching performance should not be neglected. Concerning the passive voltage, the bandwidth and the parasitic inductor in the grounding lead can affect the tested results. This paper compares the switching waveforms tested by three passive voltage probes, the bandwidth of which are 150MHz, 300MHz and 500MHz, respectively. This paper compares the switching waveforms tested by the BNC adapter, the grounding spring and the grounding lead. When testing the switching current, the coaxial shunt, the sample resistor, the split core current probe or the current transformer can be employed. This paper compares the switching waveforms tested by four kinds of current test equipment. In addition, test points are also important for testing the switching performance of high speed SiC MOSFET precisely, and this paper compares the switching waveforms at different test points.",
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Liang, M, Li, Y & Zheng, TQ 2017, Research on precise test method for switching performance of high speed SiC MOSFET. in 2016 Asian Conference on Energy, Power and Transportation Electrification, ACEPT 2016., 7811546, 2016 Asian Conference on Energy, Power and Transportation Electrification, ACEPT 2016, Institute of Electrical and Electronics Engineers Inc., 2016 Asian Conference on Energy, Power and Transportation Electrification, ACEPT 2016, Singapore, Singapore, 10/25/16. https://doi.org/10.1109/ACEPT.2016.7811546

Research on precise test method for switching performance of high speed SiC MOSFET. / Liang, Mei; Li, Yan; Zheng, Trillion Q.

2016 Asian Conference on Energy, Power and Transportation Electrification, ACEPT 2016. Institute of Electrical and Electronics Engineers Inc., 2017. 7811546 (2016 Asian Conference on Energy, Power and Transportation Electrification, ACEPT 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Liang M, Li Y, Zheng TQ. Research on precise test method for switching performance of high speed SiC MOSFET. In 2016 Asian Conference on Energy, Power and Transportation Electrification, ACEPT 2016. Institute of Electrical and Electronics Engineers Inc. 2017. 7811546. (2016 Asian Conference on Energy, Power and Transportation Electrification, ACEPT 2016). https://doi.org/10.1109/ACEPT.2016.7811546