A review of recent efforts to develop photoresist materials and processes for 193-nm (ArF excimer laser) photolithography is reported. Three categories of resist processes are discussed: (1) single-layer resists based on acrylate polymers, (2) silicon-polymer bilayer resists, and (3) surface-imaged positive-tone silylation resist processes. To date, materials have been developed for each process which exhibit resolution to better than 0.20 μm with sensitivities less than 50 mJ/cm2.
All Science Journal Classification (ASJC) codes
- Polymers and Plastics
- Organic Chemistry
- Materials Chemistry