Resistance switching characteristics of zirconium oxide containing gold nanocrystals for nonvolatile memory applications

Weihua Guan, Shibing Long, Yuan Hu, Qi Liu, Qin Wang, Ming Liu

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Resistance switching characteristics of ZrO 2 films with gold nanocrystals (nc-Au) embedded are investigated for nonvolatile memory applications. The sandwiched structure of top Au electrode/ZrO 2 (with nc-Au embedded)/n+ Si exhibits two stable resistance states (high-resistance state and low-resistance state). By applying proper voltage bias, resistance switching from one state to the other can be achieved. This resistance switching behavior is reproducible and the ratio between the high and low resistance states can be as high as two orders. A long memory retention time and over 102 times DC sweep cycles are demonstrated. The ZrO 2 films employing gold nanocrystals are promising to be used in the nonvolatile memory devices.

Original languageEnglish (US)
Pages (from-to)723-726
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume9
Issue number2
DOIs
StatePublished - Feb 1 2009

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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