Abstract
In this work, resistive switching characteristics of hafnium oxide (HfO2) with Cu doping prepared by electron beam evaporation are investigated for nonvolatile memory applications. The top metal electrode/ hafnium oxide doped with Cu/n+ Si structure shows two distinct resistance states (high-resistance and low-resistance) in DC sweep mode. By applying a proper bias, resistance switching from one state to the other state can be achieved. Though the ratio of high/low resistance is lees than an order, the switching behavior is very stable and uniform with nearly 100% device yield. No data loss is found upon continuous readout for more than 104 s. The role of the intentionally introduced Cu impurities in the resistive switching behavior is investigated. HfO2 films with Cu doping are promising to be used in the nonvolatile resistive switching memory devices.
| Original language | English (US) |
|---|---|
| Title of host publication | Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology |
| Pages | 703-708 |
| Number of pages | 6 |
| State | Published - Sep 29 2008 |
| Event | 7th International Conference on Semiconductor Technology, ISTC 2008 - Shanghai, China Duration: Mar 15 2008 → Mar 17 2008 |
Publication series
| Name | Proceedings - Electrochemical Society |
|---|---|
| Volume | PV 2008-1 |
Other
| Other | 7th International Conference on Semiconductor Technology, ISTC 2008 |
|---|---|
| Country | China |
| City | Shanghai |
| Period | 3/15/08 → 3/17/08 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electrochemistry
Cite this
}
Resistive switching characteristics of hafnium oxide with CU doping for nonvolatile memory application. / Guan, Weihua; Long, Shibing; Liu, Ming; Wang, Wei.
Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology. 2008. p. 703-708 (Proceedings - Electrochemical Society; Vol. PV 2008-1).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Resistive switching characteristics of hafnium oxide with CU doping for nonvolatile memory application
AU - Guan, Weihua
AU - Long, Shibing
AU - Liu, Ming
AU - Wang, Wei
PY - 2008/9/29
Y1 - 2008/9/29
N2 - In this work, resistive switching characteristics of hafnium oxide (HfO2) with Cu doping prepared by electron beam evaporation are investigated for nonvolatile memory applications. The top metal electrode/ hafnium oxide doped with Cu/n+ Si structure shows two distinct resistance states (high-resistance and low-resistance) in DC sweep mode. By applying a proper bias, resistance switching from one state to the other state can be achieved. Though the ratio of high/low resistance is lees than an order, the switching behavior is very stable and uniform with nearly 100% device yield. No data loss is found upon continuous readout for more than 104 s. The role of the intentionally introduced Cu impurities in the resistive switching behavior is investigated. HfO2 films with Cu doping are promising to be used in the nonvolatile resistive switching memory devices.
AB - In this work, resistive switching characteristics of hafnium oxide (HfO2) with Cu doping prepared by electron beam evaporation are investigated for nonvolatile memory applications. The top metal electrode/ hafnium oxide doped with Cu/n+ Si structure shows two distinct resistance states (high-resistance and low-resistance) in DC sweep mode. By applying a proper bias, resistance switching from one state to the other state can be achieved. Though the ratio of high/low resistance is lees than an order, the switching behavior is very stable and uniform with nearly 100% device yield. No data loss is found upon continuous readout for more than 104 s. The role of the intentionally introduced Cu impurities in the resistive switching behavior is investigated. HfO2 films with Cu doping are promising to be used in the nonvolatile resistive switching memory devices.
UR - http://www.scopus.com/inward/record.url?scp=52349085315&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=52349085315&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:52349085315
SN - 9789881740816
T3 - Proceedings - Electrochemical Society
SP - 703
EP - 708
BT - Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology
ER -