Resistive switching characteristics of hafnium oxide with CU doping for nonvolatile memory application

Weihua Guan, Shibing Long, Ming Liu, Wei Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, resistive switching characteristics of hafnium oxide (HfO2) with Cu doping prepared by electron beam evaporation are investigated for nonvolatile memory applications. The top metal electrode/ hafnium oxide doped with Cu/n+ Si structure shows two distinct resistance states (high-resistance and low-resistance) in DC sweep mode. By applying a proper bias, resistance switching from one state to the other state can be achieved. Though the ratio of high/low resistance is lees than an order, the switching behavior is very stable and uniform with nearly 100% device yield. No data loss is found upon continuous readout for more than 104 s. The role of the intentionally introduced Cu impurities in the resistive switching behavior is investigated. HfO2 films with Cu doping are promising to be used in the nonvolatile resistive switching memory devices.

Original languageEnglish (US)
Title of host publicationSemiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology
Pages703-708
Number of pages6
StatePublished - Sep 29 2008
Event7th International Conference on Semiconductor Technology, ISTC 2008 - Shanghai, China
Duration: Mar 15 2008Mar 17 2008

Publication series

NameProceedings - Electrochemical Society
VolumePV 2008-1

Other

Other7th International Conference on Semiconductor Technology, ISTC 2008
CountryChina
CityShanghai
Period3/15/083/17/08

Fingerprint

Hafnium oxides
Doping (additives)
Data storage equipment
Electron beams
Evaporation
Metals
hafnium oxide
Impurities
Electrodes

All Science Journal Classification (ASJC) codes

  • Electrochemistry

Cite this

Guan, W., Long, S., Liu, M., & Wang, W. (2008). Resistive switching characteristics of hafnium oxide with CU doping for nonvolatile memory application. In Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology (pp. 703-708). (Proceedings - Electrochemical Society; Vol. PV 2008-1).
Guan, Weihua ; Long, Shibing ; Liu, Ming ; Wang, Wei. / Resistive switching characteristics of hafnium oxide with CU doping for nonvolatile memory application. Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology. 2008. pp. 703-708 (Proceedings - Electrochemical Society).
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title = "Resistive switching characteristics of hafnium oxide with CU doping for nonvolatile memory application",
abstract = "In this work, resistive switching characteristics of hafnium oxide (HfO2) with Cu doping prepared by electron beam evaporation are investigated for nonvolatile memory applications. The top metal electrode/ hafnium oxide doped with Cu/n+ Si structure shows two distinct resistance states (high-resistance and low-resistance) in DC sweep mode. By applying a proper bias, resistance switching from one state to the other state can be achieved. Though the ratio of high/low resistance is lees than an order, the switching behavior is very stable and uniform with nearly 100{\%} device yield. No data loss is found upon continuous readout for more than 104 s. The role of the intentionally introduced Cu impurities in the resistive switching behavior is investigated. HfO2 films with Cu doping are promising to be used in the nonvolatile resistive switching memory devices.",
author = "Weihua Guan and Shibing Long and Ming Liu and Wei Wang",
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Guan, W, Long, S, Liu, M & Wang, W 2008, Resistive switching characteristics of hafnium oxide with CU doping for nonvolatile memory application. in Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology. Proceedings - Electrochemical Society, vol. PV 2008-1, pp. 703-708, 7th International Conference on Semiconductor Technology, ISTC 2008, Shanghai, China, 3/15/08.

Resistive switching characteristics of hafnium oxide with CU doping for nonvolatile memory application. / Guan, Weihua; Long, Shibing; Liu, Ming; Wang, Wei.

Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology. 2008. p. 703-708 (Proceedings - Electrochemical Society; Vol. PV 2008-1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Resistive switching characteristics of hafnium oxide with CU doping for nonvolatile memory application

AU - Guan, Weihua

AU - Long, Shibing

AU - Liu, Ming

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N2 - In this work, resistive switching characteristics of hafnium oxide (HfO2) with Cu doping prepared by electron beam evaporation are investigated for nonvolatile memory applications. The top metal electrode/ hafnium oxide doped with Cu/n+ Si structure shows two distinct resistance states (high-resistance and low-resistance) in DC sweep mode. By applying a proper bias, resistance switching from one state to the other state can be achieved. Though the ratio of high/low resistance is lees than an order, the switching behavior is very stable and uniform with nearly 100% device yield. No data loss is found upon continuous readout for more than 104 s. The role of the intentionally introduced Cu impurities in the resistive switching behavior is investigated. HfO2 films with Cu doping are promising to be used in the nonvolatile resistive switching memory devices.

AB - In this work, resistive switching characteristics of hafnium oxide (HfO2) with Cu doping prepared by electron beam evaporation are investigated for nonvolatile memory applications. The top metal electrode/ hafnium oxide doped with Cu/n+ Si structure shows two distinct resistance states (high-resistance and low-resistance) in DC sweep mode. By applying a proper bias, resistance switching from one state to the other state can be achieved. Though the ratio of high/low resistance is lees than an order, the switching behavior is very stable and uniform with nearly 100% device yield. No data loss is found upon continuous readout for more than 104 s. The role of the intentionally introduced Cu impurities in the resistive switching behavior is investigated. HfO2 films with Cu doping are promising to be used in the nonvolatile resistive switching memory devices.

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Guan W, Long S, Liu M, Wang W. Resistive switching characteristics of hafnium oxide with CU doping for nonvolatile memory application. In Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology. 2008. p. 703-708. (Proceedings - Electrochemical Society).