Resistive switching characteristics of MnOx-based ReRAM

Sen Zhang, Shibing Long, Weihua Guan, Qi Liu, Qin Wang, Ming Liu

Research output: Contribution to journalArticle

58 Scopus citations

Abstract

The resistive switching characteristics of MnOx thin film were investigated for resistive random access memory (ReRAM) applications. The devices in the form of metal-insulator-metal structure exhibited reversible resistive switching behaviour under both sweeping voltages and voltage pulses. Formation and rupture of conductive filaments were proposed to explain the resistive switching. When Al was used as the top electrode instead of Pt, the device had a better endurance performance. Additionally, the Pt/MnO x/Al device showed fast switching speed and long retention ability. The experiment result suggested that Pt/MnOx/Al device had a potentiality for practical memory application.

Original languageEnglish (US)
Article number055112
JournalJournal of Physics D: Applied Physics
Volume42
Issue number5
DOIs
StatePublished - Apr 8 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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