Resistive switching memory effect of Zr O2 films with Zr+ implanted

Qi Liu; Weihua Guan; Shibing Long; Rui Jia; Ming Liu; Junning Chen

doi:10.1063/1.2832660

Resistive switching memory effect of Zr O2 films with Zr+ implanted

Qi Liu, Weihua Guan, Shibing Long, Rui Jia, Ming Liu, Junning Chen

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

253 Scopus citations

Abstract

The AuCr Zr+ -implanted- Zr O2 n+ -Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (Rratio) of high resistive state and low resistive state is as large as five orders of magnitude with 0.5 V readout bias. Zr+ -implanted- Zr O2 films exhibit good retention characteristics and high device yield. The impact of implanted Zr+ ions on resistive switching performances is investigated. Resistive switching of the fabricated structures is explained by trap-controlled space charge limited current conduction.

Original language	English (US)
Article number	012117
Journal	Applied Physics Letters
Volume	92
Issue number	1
DOIs	https://doi.org/10.1063/1.2832660
State	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2832660

Cite this

@article{c5497bc1683741c09e3afa13623a409a,

title = "Resistive switching memory effect of Zr O2 films with Zr+ implanted",

abstract = "The AuCr Zr+ -implanted- Zr O2 n+ -Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (Rratio) of high resistive state and low resistive state is as large as five orders of magnitude with 0.5 V readout bias. Zr+ -implanted- Zr O2 films exhibit good retention characteristics and high device yield. The impact of implanted Zr+ ions on resistive switching performances is investigated. Resistive switching of the fabricated structures is explained by trap-controlled space charge limited current conduction.",

author = "Qi Liu and Weihua Guan and Shibing Long and Rui Jia and Ming Liu and Junning Chen",

note = "Funding Information: This work is partly supported by National Basic Research Program of China (973 Program) under Grant No. 2006CB302706 and National Nature Science Foundation of China under Grant Nos. 90607022, 90401002, and 60506005.",

year = "2008",

doi = "10.1063/1.2832660",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Resistive switching memory effect of Zr O2 films with Zr+ implanted

AU - Liu, Qi

AU - Guan, Weihua

AU - Long, Shibing

AU - Jia, Rui

AU - Liu, Ming

AU - Chen, Junning

N1 - Funding Information: This work is partly supported by National Basic Research Program of China (973 Program) under Grant No. 2006CB302706 and National Nature Science Foundation of China under Grant Nos. 90607022, 90401002, and 60506005.

PY - 2008

Y1 - 2008

N2 - The AuCr Zr+ -implanted- Zr O2 n+ -Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (Rratio) of high resistive state and low resistive state is as large as five orders of magnitude with 0.5 V readout bias. Zr+ -implanted- Zr O2 films exhibit good retention characteristics and high device yield. The impact of implanted Zr+ ions on resistive switching performances is investigated. Resistive switching of the fabricated structures is explained by trap-controlled space charge limited current conduction.

AB - The AuCr Zr+ -implanted- Zr O2 n+ -Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (Rratio) of high resistive state and low resistive state is as large as five orders of magnitude with 0.5 V readout bias. Zr+ -implanted- Zr O2 films exhibit good retention characteristics and high device yield. The impact of implanted Zr+ ions on resistive switching performances is investigated. Resistive switching of the fabricated structures is explained by trap-controlled space charge limited current conduction.

UR - http://www.scopus.com/inward/record.url?scp=38049094920&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38049094920&partnerID=8YFLogxK

U2 - 10.1063/1.2832660

DO - 10.1063/1.2832660

M3 - Article

AN - SCOPUS:38049094920

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012117

ER -

Resistive switching memory effect of Zr O2 films with Zr+ implanted

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this