Resistivity distribution in undoped 6H-SiC boules and wafers

Q. Li, A. Y. Polyakov, M. Skowronski, E. K. Sanchez, M. J. Loboda, M. A. Fanton, T. Bogart, D. Gamble, N. B. Smirnov, Yu Makarov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

For undoped 6H-SiC boules grown by physical vapor transport the variations of resistivity, of the type and density of deep electron and hole traps, and of the concentration of nitrogen and boron were studied as a function of position in the cross section normal to the growth axis and along the growth direction. It was observed that the concentrations of all deep electron and hole traps decreased when moving from seed to tail of the boule and from the center to the edge of the wafers. Modeling of the growth process suggests that the C/Si ratio increases in a similar fashion and could be responsible for observed changes. We also discuss the implications of such stoichiometry changes on compensation mechanisms rendering the crystals semi-insulating and on electrical uniformity of SI-SiC wafers.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
PublisherTrans Tech Publications Ltd
Pages51-54
Number of pages4
EditionPART 1
ISBN (Print)9780878494255
DOIs
StatePublished - Jan 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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