Resistivity saturation in alkali-doped C60

J. G. Hou, Li Lu, Vincent H. Crespi, X. D. Xiang, A. Zettl, Marvin L. Cohen

Research output: Contribution to journalArticle

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Abstract

The high-temperature resisitivity of K and Rb-doped C60 single crystals was measured with pulsed heating techniques and analyzed within the parallel-resistor extension to Bloch-Boltzmann transport theory. Rb3C60 exhibits resitivity saturation with ρ{variant}satRb ≈ 6 ± 3mΩ-cm, corresponding to a saturation mean free path of ℓsatRb ≈ 1 ± 0.5 A ̊. In contrast K3C60 does not show signs of resistivity saturation up to 800 K, suggesting that ρ{variant}satK > 3mΩ-cm and ℓsatK < 1.5 A ̊. The electronic states at high temperature have a characteristic length scale significantly smaller than the fcc lattice constant.

Original languageEnglish (US)
Pages (from-to)973-977
Number of pages5
JournalSolid State Communications
Volume93
Issue number12
DOIs
StatePublished - Mar 1995

Fingerprint

Alkalies
alkalies
saturation
electrical resistivity
Electronic states
Resistors
Lattice constants
transport theory
Single crystals
Heating
doped crystals
resistors
mean free path
Temperature
heating
single crystals
electronics

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Hou, J. G., Lu, L., Crespi, V. H., Xiang, X. D., Zettl, A., & Cohen, M. L. (1995). Resistivity saturation in alkali-doped C60. Solid State Communications, 93(12), 973-977. https://doi.org/10.1016/0038-1098(94)00915-5
Hou, J. G. ; Lu, Li ; Crespi, Vincent H. ; Xiang, X. D. ; Zettl, A. ; Cohen, Marvin L. / Resistivity saturation in alkali-doped C60. In: Solid State Communications. 1995 ; Vol. 93, No. 12. pp. 973-977.
@article{4e355f383d8e470bbe025560f2618e5e,
title = "Resistivity saturation in alkali-doped C60",
abstract = "The high-temperature resisitivity of K and Rb-doped C60 single crystals was measured with pulsed heating techniques and analyzed within the parallel-resistor extension to Bloch-Boltzmann transport theory. Rb3C60 exhibits resitivity saturation with ρ{variant}satRb ≈ 6 ± 3mΩ-cm, corresponding to a saturation mean free path of ℓsatRb ≈ 1 ± 0.5 A ̊. In contrast K3C60 does not show signs of resistivity saturation up to 800 K, suggesting that ρ{variant}satK > 3mΩ-cm and ℓsatK < 1.5 A ̊. The electronic states at high temperature have a characteristic length scale significantly smaller than the fcc lattice constant.",
author = "Hou, {J. G.} and Li Lu and Crespi, {Vincent H.} and Xiang, {X. D.} and A. Zettl and Cohen, {Marvin L.}",
year = "1995",
month = "3",
doi = "10.1016/0038-1098(94)00915-5",
language = "English (US)",
volume = "93",
pages = "973--977",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "12",

}

Hou, JG, Lu, L, Crespi, VH, Xiang, XD, Zettl, A & Cohen, ML 1995, 'Resistivity saturation in alkali-doped C60', Solid State Communications, vol. 93, no. 12, pp. 973-977. https://doi.org/10.1016/0038-1098(94)00915-5

Resistivity saturation in alkali-doped C60. / Hou, J. G.; Lu, Li; Crespi, Vincent H.; Xiang, X. D.; Zettl, A.; Cohen, Marvin L.

In: Solid State Communications, Vol. 93, No. 12, 03.1995, p. 973-977.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Resistivity saturation in alkali-doped C60

AU - Hou, J. G.

AU - Lu, Li

AU - Crespi, Vincent H.

AU - Xiang, X. D.

AU - Zettl, A.

AU - Cohen, Marvin L.

PY - 1995/3

Y1 - 1995/3

N2 - The high-temperature resisitivity of K and Rb-doped C60 single crystals was measured with pulsed heating techniques and analyzed within the parallel-resistor extension to Bloch-Boltzmann transport theory. Rb3C60 exhibits resitivity saturation with ρ{variant}satRb ≈ 6 ± 3mΩ-cm, corresponding to a saturation mean free path of ℓsatRb ≈ 1 ± 0.5 A ̊. In contrast K3C60 does not show signs of resistivity saturation up to 800 K, suggesting that ρ{variant}satK > 3mΩ-cm and ℓsatK < 1.5 A ̊. The electronic states at high temperature have a characteristic length scale significantly smaller than the fcc lattice constant.

AB - The high-temperature resisitivity of K and Rb-doped C60 single crystals was measured with pulsed heating techniques and analyzed within the parallel-resistor extension to Bloch-Boltzmann transport theory. Rb3C60 exhibits resitivity saturation with ρ{variant}satRb ≈ 6 ± 3mΩ-cm, corresponding to a saturation mean free path of ℓsatRb ≈ 1 ± 0.5 A ̊. In contrast K3C60 does not show signs of resistivity saturation up to 800 K, suggesting that ρ{variant}satK > 3mΩ-cm and ℓsatK < 1.5 A ̊. The electronic states at high temperature have a characteristic length scale significantly smaller than the fcc lattice constant.

UR - http://www.scopus.com/inward/record.url?scp=0029271445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029271445&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(94)00915-5

DO - 10.1016/0038-1098(94)00915-5

M3 - Article

AN - SCOPUS:0029271445

VL - 93

SP - 973

EP - 977

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 12

ER -