Resistivity saturation in alkali-doped C60

J. G. Hou, Li Lu, Vincent H. Crespi, X. D. Xiang, A. Zettl, Marvin L. Cohen

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Abstract

The high-temperature resisitivity of K and Rb-doped C60 single crystals was measured with pulsed heating techniques and analyzed within the parallel-resistor extension to Bloch-Boltzmann transport theory. Rb3C60 exhibits resitivity saturation with ρ{variant}satRb ≈ 6 ± 3mΩ-cm, corresponding to a saturation mean free path of ℓsatRb ≈ 1 ± 0.5 A ̊. In contrast K3C60 does not show signs of resistivity saturation up to 800 K, suggesting that ρ{variant}satK > 3mΩ-cm and ℓsatK < 1.5 A ̊. The electronic states at high temperature have a characteristic length scale significantly smaller than the fcc lattice constant.

Original languageEnglish (US)
Pages (from-to)973-977
Number of pages5
JournalSolid State Communications
Volume93
Issue number12
DOIs
StatePublished - Mar 1995

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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