Resonant amplification of spin transferred across a GaAs/ZnSe interface

I. Malajovich, J. M. Kikkawa, D. D. Awschalom, J. J. Berry, N. Samarth

Research output: Contribution to journalConference article

17 Scopus citations

Abstract

Time-resolved Kerr rotation and resonant spin amplification are used to study spin dynamics in ZnSe epilayers and across a GaAs/ZnSe interface. In accord with previous studies in GaAs we find that modest n doping of ZnSe epilayers enhances spin lifetimes over three orders of magnitude at low temperatures. Lifetimes reaching 60 ns are seen at low doping concentrations at temperatures from 5 to 50 K. A recently developed two-color technique of time-resolved Kerr rotation is used to excite electron spins in a GaAs substrate and to measure their arrival in an adjacent ZnSe epilayer. We find that resonant spin amplification may be used to increase the net spin transferred to the ZnSe, and discover that interlayer transport extends spin lifetimes 100-fold.

Original languageEnglish (US)
Pages (from-to)5073-5075
Number of pages3
JournalJournal of Applied Physics
Volume87
Issue number9 II
DOIs
StatePublished - May 2000
Event44th Annual Conference on Magnetism and Magnetic Materials - San Jose, CA, United States
Duration: Nov 15 1999Nov 18 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Malajovich, I., Kikkawa, J. M., Awschalom, D. D., Berry, J. J., & Samarth, N. (2000). Resonant amplification of spin transferred across a GaAs/ZnSe interface. Journal of Applied Physics, 87(9 II), 5073-5075. https://doi.org/10.1063/1.373252