Resonant electron tunneling through defects in ultrathin SiO2 gate oxides in MOSFETs

M. Städele, B. Fischer, Blair Richard Tuttle, K. Hess

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

To analyze defect-assisted elastic tunneling currents through ultrathin SiO2 gate oxides in metal-oxide semiconductor field-effect transistors (MOSFETs), we have combined semiempirical microscopic tight-binding calculations with full-band Monte Carlo transport simulations. Two prototypical devices with channel lengths of 50 and 90 nm were considered. We find that defects having an area density larger than 1011 cm-2 can enhance tunneling currents by several orders of magnitude in both devices. Resonant tunneling effects are predicted to be more pronounced for thicker oxides. For oxides thinner than 2 nm, hot electrons are unlikely to dominate gate leakage currents in the presence of defects.

Original languageEnglish (US)
Pages (from-to)1027-1032
Number of pages6
JournalSolid-State Electronics
Volume46
Issue number7
DOIs
StatePublished - Jul 1 2002

Fingerprint

Electron tunneling
MOSFET devices
electron tunneling
metal oxide semiconductors
Oxides
field effect transistors
Defects
oxides
defects
Resonant tunneling
Hot electrons
resonant tunneling
hot electrons
Leakage currents
leakage
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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Resonant electron tunneling through defects in ultrathin SiO2 gate oxides in MOSFETs. / Städele, M.; Fischer, B.; Tuttle, Blair Richard; Hess, K.

In: Solid-State Electronics, Vol. 46, No. 7, 01.07.2002, p. 1027-1032.

Research output: Contribution to journalArticle

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