Resonant electron tunneling through defects in ultrathin SiO2 gate oxides in MOSFETs

M. Städele, B. Fischer, B. R. Tuttle, K. Hess

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

To analyze defect-assisted elastic tunneling currents through ultrathin SiO2 gate oxides in metal-oxide semiconductor field-effect transistors (MOSFETs), we have combined semiempirical microscopic tight-binding calculations with full-band Monte Carlo transport simulations. Two prototypical devices with channel lengths of 50 and 90 nm were considered. We find that defects having an area density larger than 1011 cm-2 can enhance tunneling currents by several orders of magnitude in both devices. Resonant tunneling effects are predicted to be more pronounced for thicker oxides. For oxides thinner than 2 nm, hot electrons are unlikely to dominate gate leakage currents in the presence of defects.

Original languageEnglish (US)
Pages (from-to)1027-1032
Number of pages6
JournalSolid-State Electronics
Volume46
Issue number7
DOIs
StatePublished - Jul 1 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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