Response to "Comment on 'A model of hole trapping in SiO2 films on silicon' " [J. Appl. Phys. 83, 5591 (1998)]

P. M. Lenahan, J. F. Conley

Research output: Contribution to journalLetterpeer-review

2 Scopus citations

Abstract

We disagree with the comment of R. A. B. Devine, W. L. Warren, and S. Karna.

Original languageEnglish (US)
Pages (from-to)5593-5594
Number of pages2
JournalJournal of Applied Physics
Volume83
Issue number10
DOIs
StatePublished - 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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