Reverse current transport mechanism in shallow junctions containing silicide spikes

D. Z. Chi, W. D. Wang, S. J. Chua, S. Ashok

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The discussion on a physical model describing the current transport mechanism in shallow Si p-n junctions containing silicide spikes was done. The model included analytical calculations of tunneling probability of electrons at the silicide/silicon interface and maximum electrical field around a silicide spike tip. The explanation of athermal behavior of the reverse current in the shallow junctions was given in terms of electric field enhancement at the sharp spikes.

Original languageEnglish (US)
Pages (from-to)7532-7535
Number of pages4
JournalJournal of Applied Physics
Volume92
Issue number12
DOIs
StatePublished - Dec 15 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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