Reverse current transport mechanism in shallow junctions containing silicide spikes

D. Z. Chi, W. D. Wang, S. J. Chua, S. Ashok

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The discussion on a physical model describing the current transport mechanism in shallow Si p-n junctions containing silicide spikes was done. The model included analytical calculations of tunneling probability of electrons at the silicide/silicon interface and maximum electrical field around a silicide spike tip. The explanation of athermal behavior of the reverse current in the shallow junctions was given in terms of electric field enhancement at the sharp spikes.

Original languageEnglish (US)
Pages (from-to)7532-7535
Number of pages4
JournalJournal of Applied Physics
Volume92
Issue number12
DOIs
StatePublished - Dec 15 2002

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spikes
p-n junctions
electric fields
augmentation
silicon
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Chi, D. Z. ; Wang, W. D. ; Chua, S. J. ; Ashok, S. / Reverse current transport mechanism in shallow junctions containing silicide spikes. In: Journal of Applied Physics. 2002 ; Vol. 92, No. 12. pp. 7532-7535.
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Reverse current transport mechanism in shallow junctions containing silicide spikes. / Chi, D. Z.; Wang, W. D.; Chua, S. J.; Ashok, S.

In: Journal of Applied Physics, Vol. 92, No. 12, 15.12.2002, p. 7532-7535.

Research output: Contribution to journalArticle

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