The discussion on a physical model describing the current transport mechanism in shallow Si p-n junctions containing silicide spikes was done. The model included analytical calculations of tunneling probability of electrons at the silicide/silicon interface and maximum electrical field around a silicide spike tip. The explanation of athermal behavior of the reverse current in the shallow junctions was given in terms of electric field enhancement at the sharp spikes.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)