Reversible fluorination of graphene

Evidence of a two-dimensional wide bandgap semiconductor

S. H. Cheng, K. Zou, F. Okino, H. R. Gutierrez, A. Gupta, N. Shen, P. C. Eklund, Jorge Osvaldo Sofo, Jun Zhu

Research output: Contribution to journalArticle

317 Citations (Scopus)

Abstract

We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10GΩ at room temperature. Electron transport in graphene fluoride is well described by variable range hopping in two dimensions due to the presence of localized states in the band gap. Graphene obtained through the reduction of graphene fluoride is highly conductive, exhibiting a resistivity of less than 100kΩ at room temperature. Our approach provides a pathway to reversibly engineer the band structure and conductivity of graphene for electronic and optical applications.

Original languageEnglish (US)
Article number205435
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number20
DOIs
StatePublished - May 25 2010

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Fluorination
fluorination
Graphite
Graphene
graphene
Energy gap
Semiconductor materials
Fluorides
fluorides
room temperature
Band structure
engineers
Crystalline materials
Engineers
conductivity
Temperature
electrical resistivity
synthesis
electronics

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Cheng, S. H. ; Zou, K. ; Okino, F. ; Gutierrez, H. R. ; Gupta, A. ; Shen, N. ; Eklund, P. C. ; Sofo, Jorge Osvaldo ; Zhu, Jun. / Reversible fluorination of graphene : Evidence of a two-dimensional wide bandgap semiconductor. In: Physical Review B - Condensed Matter and Materials Physics. 2010 ; Vol. 81, No. 20.
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Reversible fluorination of graphene : Evidence of a two-dimensional wide bandgap semiconductor. / Cheng, S. H.; Zou, K.; Okino, F.; Gutierrez, H. R.; Gupta, A.; Shen, N.; Eklund, P. C.; Sofo, Jorge Osvaldo; Zhu, Jun.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 81, No. 20, 205435, 25.05.2010.

Research output: Contribution to journalArticle

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AU - Cheng, S. H.

AU - Zou, K.

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