Reversible Polarization Rotation in Epitaxial Ferroelectric Bilayers

Guangqing Liu, Qi Zhang, Hsin Hui Huang, Paul Munroe, Valanoor Nagarajan, Hugh Simons, Zijian Hong, Long-qing Chen

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Polarization rotation engineering is a promising path to giant dielectric and electromechanical responses in ferroelectric materials and devices. This work demonstrates robust and reversible in- to out-of-plane polarization rotation in ultrathin (nanoscale) epitaxial (001) tetragonal PbZr0.3Ti0.7O3 (PZT-T)/rhombohedral PbZr0.55Ti0.45O3 (PZT-R) ferroelectric bilayers. An underlying 20 nm thick PZT-R layer reduces the symmetry in a 5 nm thick PZT-T layer by imposing an in-plane tensile strain while simultaneously decoupling the PZT-T layer from the substrate. This prevents clamping and facilitates large-scale polarization rotation switching (≈60 μC cm−2) and an effective d 33 response 500% (≈250 pm V−1) larger than the PZT-R layer alone. Furthermore, this enhancement is stable for more than 107 electrical switching cycles. These bilayers present a simple and highly controllable means to design and optimize rotational polar systems as an alternate to traditional composition-based approaches. The precise control of the subtle interface-driven interactions between the lattice and the external factors that control polarization opens a new door to enhanced—or completely new—functional properties.

Original languageEnglish (US)
Article number1600444
JournalAdvanced Materials Interfaces
Volume3
Issue number18
DOIs
StatePublished - Sep 20 2016

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Ferroelectric materials
Polarization
Ferroelectric devices
Tensile strain
Substrates
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Liu, G., Zhang, Q., Huang, H. H., Munroe, P., Nagarajan, V., Simons, H., ... Chen, L. (2016). Reversible Polarization Rotation in Epitaxial Ferroelectric Bilayers. Advanced Materials Interfaces, 3(18), [1600444]. https://doi.org/10.1002/admi.201600444
Liu, Guangqing ; Zhang, Qi ; Huang, Hsin Hui ; Munroe, Paul ; Nagarajan, Valanoor ; Simons, Hugh ; Hong, Zijian ; Chen, Long-qing. / Reversible Polarization Rotation in Epitaxial Ferroelectric Bilayers. In: Advanced Materials Interfaces. 2016 ; Vol. 3, No. 18.
@article{4128307401004dc99fda64cbfb52a4f4,
title = "Reversible Polarization Rotation in Epitaxial Ferroelectric Bilayers",
abstract = "Polarization rotation engineering is a promising path to giant dielectric and electromechanical responses in ferroelectric materials and devices. This work demonstrates robust and reversible in- to out-of-plane polarization rotation in ultrathin (nanoscale) epitaxial (001) tetragonal PbZr0.3Ti0.7O3 (PZT-T)/rhombohedral PbZr0.55Ti0.45O3 (PZT-R) ferroelectric bilayers. An underlying 20 nm thick PZT-R layer reduces the symmetry in a 5 nm thick PZT-T layer by imposing an in-plane tensile strain while simultaneously decoupling the PZT-T layer from the substrate. This prevents clamping and facilitates large-scale polarization rotation switching (≈60 μC cm−2) and an effective d 33 response 500{\%} (≈250 pm V−1) larger than the PZT-R layer alone. Furthermore, this enhancement is stable for more than 107 electrical switching cycles. These bilayers present a simple and highly controllable means to design and optimize rotational polar systems as an alternate to traditional composition-based approaches. The precise control of the subtle interface-driven interactions between the lattice and the external factors that control polarization opens a new door to enhanced—or completely new—functional properties.",
author = "Guangqing Liu and Qi Zhang and Huang, {Hsin Hui} and Paul Munroe and Valanoor Nagarajan and Hugh Simons and Zijian Hong and Long-qing Chen",
year = "2016",
month = "9",
day = "20",
doi = "10.1002/admi.201600444",
language = "English (US)",
volume = "3",
journal = "Advanced Materials Interfaces",
issn = "2196-7350",
publisher = "John Wiley and Sons Ltd",
number = "18",

}

Liu, G, Zhang, Q, Huang, HH, Munroe, P, Nagarajan, V, Simons, H, Hong, Z & Chen, L 2016, 'Reversible Polarization Rotation in Epitaxial Ferroelectric Bilayers', Advanced Materials Interfaces, vol. 3, no. 18, 1600444. https://doi.org/10.1002/admi.201600444

Reversible Polarization Rotation in Epitaxial Ferroelectric Bilayers. / Liu, Guangqing; Zhang, Qi; Huang, Hsin Hui; Munroe, Paul; Nagarajan, Valanoor; Simons, Hugh; Hong, Zijian; Chen, Long-qing.

In: Advanced Materials Interfaces, Vol. 3, No. 18, 1600444, 20.09.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Reversible Polarization Rotation in Epitaxial Ferroelectric Bilayers

AU - Liu, Guangqing

AU - Zhang, Qi

AU - Huang, Hsin Hui

AU - Munroe, Paul

AU - Nagarajan, Valanoor

AU - Simons, Hugh

AU - Hong, Zijian

AU - Chen, Long-qing

PY - 2016/9/20

Y1 - 2016/9/20

N2 - Polarization rotation engineering is a promising path to giant dielectric and electromechanical responses in ferroelectric materials and devices. This work demonstrates robust and reversible in- to out-of-plane polarization rotation in ultrathin (nanoscale) epitaxial (001) tetragonal PbZr0.3Ti0.7O3 (PZT-T)/rhombohedral PbZr0.55Ti0.45O3 (PZT-R) ferroelectric bilayers. An underlying 20 nm thick PZT-R layer reduces the symmetry in a 5 nm thick PZT-T layer by imposing an in-plane tensile strain while simultaneously decoupling the PZT-T layer from the substrate. This prevents clamping and facilitates large-scale polarization rotation switching (≈60 μC cm−2) and an effective d 33 response 500% (≈250 pm V−1) larger than the PZT-R layer alone. Furthermore, this enhancement is stable for more than 107 electrical switching cycles. These bilayers present a simple and highly controllable means to design and optimize rotational polar systems as an alternate to traditional composition-based approaches. The precise control of the subtle interface-driven interactions between the lattice and the external factors that control polarization opens a new door to enhanced—or completely new—functional properties.

AB - Polarization rotation engineering is a promising path to giant dielectric and electromechanical responses in ferroelectric materials and devices. This work demonstrates robust and reversible in- to out-of-plane polarization rotation in ultrathin (nanoscale) epitaxial (001) tetragonal PbZr0.3Ti0.7O3 (PZT-T)/rhombohedral PbZr0.55Ti0.45O3 (PZT-R) ferroelectric bilayers. An underlying 20 nm thick PZT-R layer reduces the symmetry in a 5 nm thick PZT-T layer by imposing an in-plane tensile strain while simultaneously decoupling the PZT-T layer from the substrate. This prevents clamping and facilitates large-scale polarization rotation switching (≈60 μC cm−2) and an effective d 33 response 500% (≈250 pm V−1) larger than the PZT-R layer alone. Furthermore, this enhancement is stable for more than 107 electrical switching cycles. These bilayers present a simple and highly controllable means to design and optimize rotational polar systems as an alternate to traditional composition-based approaches. The precise control of the subtle interface-driven interactions between the lattice and the external factors that control polarization opens a new door to enhanced—or completely new—functional properties.

UR - http://www.scopus.com/inward/record.url?scp=84978946309&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84978946309&partnerID=8YFLogxK

U2 - 10.1002/admi.201600444

DO - 10.1002/admi.201600444

M3 - Article

VL - 3

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

SN - 2196-7350

IS - 18

M1 - 1600444

ER -

Liu G, Zhang Q, Huang HH, Munroe P, Nagarajan V, Simons H et al. Reversible Polarization Rotation in Epitaxial Ferroelectric Bilayers. Advanced Materials Interfaces. 2016 Sep 20;3(18). 1600444. https://doi.org/10.1002/admi.201600444