Reversible Polarization Rotation in Epitaxial Ferroelectric Bilayers

Guangqing Liu, Qi Zhang, Hsin Hui Huang, Paul Munroe, Valanoor Nagarajan, Hugh Simons, Zijian Hong, Long Qing Chen

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Polarization rotation engineering is a promising path to giant dielectric and electromechanical responses in ferroelectric materials and devices. This work demonstrates robust and reversible in- to out-of-plane polarization rotation in ultrathin (nanoscale) epitaxial (001) tetragonal PbZr0.3Ti0.7O3 (PZT-T)/rhombohedral PbZr0.55Ti0.45O3 (PZT-R) ferroelectric bilayers. An underlying 20 nm thick PZT-R layer reduces the symmetry in a 5 nm thick PZT-T layer by imposing an in-plane tensile strain while simultaneously decoupling the PZT-T layer from the substrate. This prevents clamping and facilitates large-scale polarization rotation switching (≈60 μC cm−2) and an effective d 33 response 500% (≈250 pm V−1) larger than the PZT-R layer alone. Furthermore, this enhancement is stable for more than 107 electrical switching cycles. These bilayers present a simple and highly controllable means to design and optimize rotational polar systems as an alternate to traditional composition-based approaches. The precise control of the subtle interface-driven interactions between the lattice and the external factors that control polarization opens a new door to enhanced—or completely new—functional properties.

Original languageEnglish (US)
Article number1600444
JournalAdvanced Materials Interfaces
Volume3
Issue number18
DOIs
StatePublished - Sep 20 2016

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering

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