Reversing of silicon surface aging by lamp cleaning

K. Shanmugasundaram, K. Chang, Jeffrey Shallenberger, A. Danel, F. Tardif, M. Veillerot, Jerzy Ruzyllo

Research output: Contribution to conferencePaper

Abstract

Chemical composition of Si surfaces subjected to prolonged storage undergoes significant changes. In this study the accumulation of organic contaminants on Si surfaces and the removal of such organic contaminants using lamp illumination were investigated. It is shown that Rapid Thermal Cleaning (RTC) implemented using infra-red lamps can reverse the effect of "surface aging" provided that in the course of prolonged storage the volatile organics are not transformed into non-volatile compounds. As expected, the best results were obtained using a strong oxidizing ambient such as ozone.

Original languageEnglish (US)
Pages348-355
Number of pages8
StatePublished - Dec 1 2003
EventCleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium - Orlando, FL., United States
Duration: Oct 12 2003Oct 17 2003

Other

OtherCleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium
CountryUnited States
CityOrlando, FL.
Period10/12/0310/17/03

Fingerprint

Electric lamps
Cleaning
Aging of materials
Silicon
Infrared lamps
Impurities
Ozone
Lighting
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Shanmugasundaram, K., Chang, K., Shallenberger, J., Danel, A., Tardif, F., Veillerot, M., & Ruzyllo, J. (2003). Reversing of silicon surface aging by lamp cleaning. 348-355. Paper presented at Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium, Orlando, FL., United States.
Shanmugasundaram, K. ; Chang, K. ; Shallenberger, Jeffrey ; Danel, A. ; Tardif, F. ; Veillerot, M. ; Ruzyllo, Jerzy. / Reversing of silicon surface aging by lamp cleaning. Paper presented at Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium, Orlando, FL., United States.8 p.
@conference{9dc14463361c46819b2602cdea9cb77b,
title = "Reversing of silicon surface aging by lamp cleaning",
abstract = "Chemical composition of Si surfaces subjected to prolonged storage undergoes significant changes. In this study the accumulation of organic contaminants on Si surfaces and the removal of such organic contaminants using lamp illumination were investigated. It is shown that Rapid Thermal Cleaning (RTC) implemented using infra-red lamps can reverse the effect of {"}surface aging{"} provided that in the course of prolonged storage the volatile organics are not transformed into non-volatile compounds. As expected, the best results were obtained using a strong oxidizing ambient such as ozone.",
author = "K. Shanmugasundaram and K. Chang and Jeffrey Shallenberger and A. Danel and F. Tardif and M. Veillerot and Jerzy Ruzyllo",
year = "2003",
month = "12",
day = "1",
language = "English (US)",
pages = "348--355",
note = "Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium ; Conference date: 12-10-2003 Through 17-10-2003",

}

Shanmugasundaram, K, Chang, K, Shallenberger, J, Danel, A, Tardif, F, Veillerot, M & Ruzyllo, J 2003, 'Reversing of silicon surface aging by lamp cleaning', Paper presented at Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium, Orlando, FL., United States, 10/12/03 - 10/17/03 pp. 348-355.

Reversing of silicon surface aging by lamp cleaning. / Shanmugasundaram, K.; Chang, K.; Shallenberger, Jeffrey; Danel, A.; Tardif, F.; Veillerot, M.; Ruzyllo, Jerzy.

2003. 348-355 Paper presented at Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium, Orlando, FL., United States.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Reversing of silicon surface aging by lamp cleaning

AU - Shanmugasundaram, K.

AU - Chang, K.

AU - Shallenberger, Jeffrey

AU - Danel, A.

AU - Tardif, F.

AU - Veillerot, M.

AU - Ruzyllo, Jerzy

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Chemical composition of Si surfaces subjected to prolonged storage undergoes significant changes. In this study the accumulation of organic contaminants on Si surfaces and the removal of such organic contaminants using lamp illumination were investigated. It is shown that Rapid Thermal Cleaning (RTC) implemented using infra-red lamps can reverse the effect of "surface aging" provided that in the course of prolonged storage the volatile organics are not transformed into non-volatile compounds. As expected, the best results were obtained using a strong oxidizing ambient such as ozone.

AB - Chemical composition of Si surfaces subjected to prolonged storage undergoes significant changes. In this study the accumulation of organic contaminants on Si surfaces and the removal of such organic contaminants using lamp illumination were investigated. It is shown that Rapid Thermal Cleaning (RTC) implemented using infra-red lamps can reverse the effect of "surface aging" provided that in the course of prolonged storage the volatile organics are not transformed into non-volatile compounds. As expected, the best results were obtained using a strong oxidizing ambient such as ozone.

UR - http://www.scopus.com/inward/record.url?scp=3042739640&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042739640&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:3042739640

SP - 348

EP - 355

ER -

Shanmugasundaram K, Chang K, Shallenberger J, Danel A, Tardif F, Veillerot M et al. Reversing of silicon surface aging by lamp cleaning. 2003. Paper presented at Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium, Orlando, FL., United States.