Reversing of silicon surface aging by lamp cleaning

K. Shanmugasundaram, K. Chang, Jeffrey Shallenberger, A. Danel, F. Tardif, M. Veillerot, Jerzy Ruzyllo

Research output: Contribution to conferencePaperpeer-review

Abstract

Chemical composition of Si surfaces subjected to prolonged storage undergoes significant changes. In this study the accumulation of organic contaminants on Si surfaces and the removal of such organic contaminants using lamp illumination were investigated. It is shown that Rapid Thermal Cleaning (RTC) implemented using infra-red lamps can reverse the effect of "surface aging" provided that in the course of prolonged storage the volatile organics are not transformed into non-volatile compounds. As expected, the best results were obtained using a strong oxidizing ambient such as ozone.

Original languageEnglish (US)
Pages348-355
Number of pages8
StatePublished - Dec 1 2003
EventCleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium - Orlando, FL., United States
Duration: Oct 12 2003Oct 17 2003

Other

OtherCleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium
CountryUnited States
CityOrlando, FL.
Period10/12/0310/17/03

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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