RF dielectric loss due to MOCVD aluminum nitride on high resistivity silicon

Feyza Berber, Derek W. Johnson, Kyle M. Sundqvist, Edwin L. Piner, Gregory H. Huff, H. Rusty Harris

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The contribution of high-frequency losses from an aluminum nitride (AlN) layer on high resistivity silicon (Si) is reported. The AlN, deposited on silicon via metalorganic chemical vapor phase deposition as a nucleation layer for subsequent gallium nitride growth, is analyzed for its contribution to the dielectric losses from 6-20 GHz and differentiated from the loss due to the p-type layer formed in the silicon substrate. It is found that AlN is a stronger contributor to overall dielectric loss in comparison with the silicon substrate.

Original languageEnglish (US)
Article number7851029
Pages (from-to)1465-1470
Number of pages6
JournalIEEE Transactions on Microwave Theory and Techniques
Volume65
Issue number5
DOIs
StatePublished - May 2017

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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