RF dielectric loss due to MOCVD aluminum nitride on high resistivity silicon

Feyza Berber, Derek W. Johnson, Kyle M. Sundqvist, Edwin L. Piner, Gregory H. Huff, H. Rusty Harris

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The contribution of high-frequency losses from an aluminum nitride (AlN) layer on high resistivity silicon (Si) is reported. The AlN, deposited on silicon via metalorganic chemical vapor phase deposition as a nucleation layer for subsequent gallium nitride growth, is analyzed for its contribution to the dielectric losses from 6-20 GHz and differentiated from the loss due to the p-type layer formed in the silicon substrate. It is found that AlN is a stronger contributor to overall dielectric loss in comparison with the silicon substrate.

Original languageEnglish (US)
Article number7851029
Pages (from-to)1465-1470
Number of pages6
JournalIEEE Transactions on Microwave Theory and Techniques
Volume65
Issue number5
DOIs
StatePublished - May 2017

Fingerprint

Aluminum nitride
aluminum nitrides
Metallorganic chemical vapor deposition
Dielectric losses
dielectric loss
metalorganic chemical vapor deposition
Silicon
electrical resistivity
silicon
Gallium nitride
gallium nitrides
Substrates
Nucleation
Vapors
nucleation
vapor phases

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Berber, Feyza ; Johnson, Derek W. ; Sundqvist, Kyle M. ; Piner, Edwin L. ; Huff, Gregory H. ; Rusty Harris, H. / RF dielectric loss due to MOCVD aluminum nitride on high resistivity silicon. In: IEEE Transactions on Microwave Theory and Techniques. 2017 ; Vol. 65, No. 5. pp. 1465-1470.
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RF dielectric loss due to MOCVD aluminum nitride on high resistivity silicon. / Berber, Feyza; Johnson, Derek W.; Sundqvist, Kyle M.; Piner, Edwin L.; Huff, Gregory H.; Rusty Harris, H.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 65, No. 5, 7851029, 05.2017, p. 1465-1470.

Research output: Contribution to journalArticle

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