Richardson constant of Al- and Au-GaAs Schottky barrier diodes

J. M. Borrego, R. J. Gutmann, S Ashok

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Abstract

The Richardson constant of Al- and Au-nGaAs Schottky barrier diodes of low doping concentration has been determined from the measured forward I-V characteristics. Richardson constants higher than the theoretical are related to the presence of an additional majority-carrier current caused by recombination of electrons at traps at the metal-semiconductor interface. The data shows that the traps are located approximately 0.75 eV below the conduction band and are in equilibrium with the metal.

Original languageEnglish (US)
Pages (from-to)169-172
Number of pages4
JournalApplied Physics Letters
Volume30
Issue number3
DOIs
StatePublished - Dec 1 1977

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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