TY - JOUR
T1 - Robustness of topological surface states against strong disorder observed in B i2 T e3 nanotubes
AU - Du, Renzhong
AU - Hsu, Hsiu Chuan
AU - Balram, Ajit C.
AU - Yin, Yuewei
AU - Dong, Sining
AU - Dai, Wenqing
AU - Zhao, Weiwei
AU - Kim, Duksoo
AU - Yu, Shih Ying
AU - Wang, Jian
AU - Li, Xiaoguang
AU - Mohney, Suzanne E.
AU - Tadigadapa, Srinivas
AU - Samarth, Nitin
AU - Chan, Moses H.W.
AU - Jain, Jainendra K.
AU - Liu, Chao Xing
AU - Li, Qi
N1 - Funding Information:
The authors would like to acknowledge the partial support from the Department of Energy (DOE) Grant No. DE-FG02-08ER46531 (Q.L.) for experimental studies, DOE Grant No. DE-SC0005042 (A.C.B.) and Office of Naval Research under the Grant No. N00014-15-1-2675 (C.X.L.) for theoretical studies, National Science Foundation Grant No. DMR-1207474 (Q.L.) National Natural Science Foundation of China and NBPRC Grant No. 2012CB922003 (X.L.) for nanotube growth, and the partial student support from the Penn State Materials Research Science and Engineering Center, funded by the National Science Foundation under Grants No. DMR-0820404 and No. DMR-1420620 (M.C.)
Publisher Copyright:
© 2016 American Physical Society.
PY - 2016/5/2
Y1 - 2016/5/2
N2 - Three-dimensional topological insulators are characterized by Dirac-like conducting surface states, the existence of which has been confirmed in relatively clean metallic samples by angle-resolved photoemission spectroscopy, as well as by anomalous Aharonov-Bohm oscillations in the magnetoresistance of nanoribbons. However, a fundamental aspect of these surface states, namely, their robustness to time-reversal-invariant disorder, has remained relatively untested. In this work, we have synthesized thin nanotubes of Bi2Te3 with extremely insulating bulk at low temperatures due to disorder. Nonetheless, the magnetoresistance exhibits quantum oscillations as a function of the magnetic field along the axis of the nanotubes, with a period determined by the cross-sectional area of the outer surface. Detailed numerical simulations based on a recursive Green function method support that the resistance oscillations are arising from the topological surface states which have substantially longer localization length than that of other nontopological states. This observation demonstrates coherent transport at the surface even for highly disordered samples, thus providing a direct confirmation of the inherently topological character of surface states. The result also demonstrates a viable route for revealing the properties of topological states by suppressing the bulk conduction using disorder.
AB - Three-dimensional topological insulators are characterized by Dirac-like conducting surface states, the existence of which has been confirmed in relatively clean metallic samples by angle-resolved photoemission spectroscopy, as well as by anomalous Aharonov-Bohm oscillations in the magnetoresistance of nanoribbons. However, a fundamental aspect of these surface states, namely, their robustness to time-reversal-invariant disorder, has remained relatively untested. In this work, we have synthesized thin nanotubes of Bi2Te3 with extremely insulating bulk at low temperatures due to disorder. Nonetheless, the magnetoresistance exhibits quantum oscillations as a function of the magnetic field along the axis of the nanotubes, with a period determined by the cross-sectional area of the outer surface. Detailed numerical simulations based on a recursive Green function method support that the resistance oscillations are arising from the topological surface states which have substantially longer localization length than that of other nontopological states. This observation demonstrates coherent transport at the surface even for highly disordered samples, thus providing a direct confirmation of the inherently topological character of surface states. The result also demonstrates a viable route for revealing the properties of topological states by suppressing the bulk conduction using disorder.
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U2 - 10.1103/PhysRevB.93.195402
DO - 10.1103/PhysRevB.93.195402
M3 - Article
AN - SCOPUS:84966373479
VL - 93
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 2469-9950
IS - 19
ER -