Robustness of topological surface states against strong disorder observed in B i2 T e3 nanotubes

Renzhong Du, Hsiu Chuan Hsu, Ajit C. Balram, Yuewei Yin, Sining Dong, Wenqing Dai, Weiwei Zhao, Duksoo Kim, Shih Ying Yu, Jian Wang, Xiaoguang Li, Suzanne E. Mohney, Srinivas A. Tadigadapa, Nitin Samarth, Moses Hung-Wai Chan, Jainendra K. Jain, Chaoxing Liu, Qi Li

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Three-dimensional topological insulators are characterized by Dirac-like conducting surface states, the existence of which has been confirmed in relatively clean metallic samples by angle-resolved photoemission spectroscopy, as well as by anomalous Aharonov-Bohm oscillations in the magnetoresistance of nanoribbons. However, a fundamental aspect of these surface states, namely, their robustness to time-reversal-invariant disorder, has remained relatively untested. In this work, we have synthesized thin nanotubes of Bi2Te3 with extremely insulating bulk at low temperatures due to disorder. Nonetheless, the magnetoresistance exhibits quantum oscillations as a function of the magnetic field along the axis of the nanotubes, with a period determined by the cross-sectional area of the outer surface. Detailed numerical simulations based on a recursive Green function method support that the resistance oscillations are arising from the topological surface states which have substantially longer localization length than that of other nontopological states. This observation demonstrates coherent transport at the surface even for highly disordered samples, thus providing a direct confirmation of the inherently topological character of surface states. The result also demonstrates a viable route for revealing the properties of topological states by suppressing the bulk conduction using disorder.

Original languageEnglish (US)
JournalPhysical Review B
Volume93
Issue number19
DOIs
StatePublished - May 2 2016

Fingerprint

Surface states
Nanotubes
nanotubes
disorders
Magnetoresistance
Recursive functions
Nanoribbons
oscillations
Carbon Nanotubes
Photoelectron spectroscopy
Green's function
recursive functions
conduction
Magnetic fields
Computer simulation
photoelectric emission
Green's functions
routes
insulators
magnetic fields

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Du, Renzhong ; Hsu, Hsiu Chuan ; Balram, Ajit C. ; Yin, Yuewei ; Dong, Sining ; Dai, Wenqing ; Zhao, Weiwei ; Kim, Duksoo ; Yu, Shih Ying ; Wang, Jian ; Li, Xiaoguang ; Mohney, Suzanne E. ; Tadigadapa, Srinivas A. ; Samarth, Nitin ; Chan, Moses Hung-Wai ; Jain, Jainendra K. ; Liu, Chaoxing ; Li, Qi. / Robustness of topological surface states against strong disorder observed in B i2 T e3 nanotubes. In: Physical Review B. 2016 ; Vol. 93, No. 19.
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abstract = "Three-dimensional topological insulators are characterized by Dirac-like conducting surface states, the existence of which has been confirmed in relatively clean metallic samples by angle-resolved photoemission spectroscopy, as well as by anomalous Aharonov-Bohm oscillations in the magnetoresistance of nanoribbons. However, a fundamental aspect of these surface states, namely, their robustness to time-reversal-invariant disorder, has remained relatively untested. In this work, we have synthesized thin nanotubes of Bi2Te3 with extremely insulating bulk at low temperatures due to disorder. Nonetheless, the magnetoresistance exhibits quantum oscillations as a function of the magnetic field along the axis of the nanotubes, with a period determined by the cross-sectional area of the outer surface. Detailed numerical simulations based on a recursive Green function method support that the resistance oscillations are arising from the topological surface states which have substantially longer localization length than that of other nontopological states. This observation demonstrates coherent transport at the surface even for highly disordered samples, thus providing a direct confirmation of the inherently topological character of surface states. The result also demonstrates a viable route for revealing the properties of topological states by suppressing the bulk conduction using disorder.",
author = "Renzhong Du and Hsu, {Hsiu Chuan} and Balram, {Ajit C.} and Yuewei Yin and Sining Dong and Wenqing Dai and Weiwei Zhao and Duksoo Kim and Yu, {Shih Ying} and Jian Wang and Xiaoguang Li and Mohney, {Suzanne E.} and Tadigadapa, {Srinivas A.} and Nitin Samarth and Chan, {Moses Hung-Wai} and Jain, {Jainendra K.} and Chaoxing Liu and Qi Li",
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Du, R, Hsu, HC, Balram, AC, Yin, Y, Dong, S, Dai, W, Zhao, W, Kim, D, Yu, SY, Wang, J, Li, X, Mohney, SE, Tadigadapa, SA, Samarth, N, Chan, MH-W, Jain, JK, Liu, C & Li, Q 2016, 'Robustness of topological surface states against strong disorder observed in B i2 T e3 nanotubes', Physical Review B, vol. 93, no. 19. https://doi.org/10.1103/PhysRevB.93.195402

Robustness of topological surface states against strong disorder observed in B i2 T e3 nanotubes. / Du, Renzhong; Hsu, Hsiu Chuan; Balram, Ajit C.; Yin, Yuewei; Dong, Sining; Dai, Wenqing; Zhao, Weiwei; Kim, Duksoo; Yu, Shih Ying; Wang, Jian; Li, Xiaoguang; Mohney, Suzanne E.; Tadigadapa, Srinivas A.; Samarth, Nitin; Chan, Moses Hung-Wai; Jain, Jainendra K.; Liu, Chaoxing; Li, Qi.

In: Physical Review B, Vol. 93, No. 19, 02.05.2016.

Research output: Contribution to journalArticle

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T1 - Robustness of topological surface states against strong disorder observed in B i2 T e3 nanotubes

AU - Du, Renzhong

AU - Hsu, Hsiu Chuan

AU - Balram, Ajit C.

AU - Yin, Yuewei

AU - Dong, Sining

AU - Dai, Wenqing

AU - Zhao, Weiwei

AU - Kim, Duksoo

AU - Yu, Shih Ying

AU - Wang, Jian

AU - Li, Xiaoguang

AU - Mohney, Suzanne E.

AU - Tadigadapa, Srinivas A.

AU - Samarth, Nitin

AU - Chan, Moses Hung-Wai

AU - Jain, Jainendra K.

AU - Liu, Chaoxing

AU - Li, Qi

PY - 2016/5/2

Y1 - 2016/5/2

N2 - Three-dimensional topological insulators are characterized by Dirac-like conducting surface states, the existence of which has been confirmed in relatively clean metallic samples by angle-resolved photoemission spectroscopy, as well as by anomalous Aharonov-Bohm oscillations in the magnetoresistance of nanoribbons. However, a fundamental aspect of these surface states, namely, their robustness to time-reversal-invariant disorder, has remained relatively untested. In this work, we have synthesized thin nanotubes of Bi2Te3 with extremely insulating bulk at low temperatures due to disorder. Nonetheless, the magnetoresistance exhibits quantum oscillations as a function of the magnetic field along the axis of the nanotubes, with a period determined by the cross-sectional area of the outer surface. Detailed numerical simulations based on a recursive Green function method support that the resistance oscillations are arising from the topological surface states which have substantially longer localization length than that of other nontopological states. This observation demonstrates coherent transport at the surface even for highly disordered samples, thus providing a direct confirmation of the inherently topological character of surface states. The result also demonstrates a viable route for revealing the properties of topological states by suppressing the bulk conduction using disorder.

AB - Three-dimensional topological insulators are characterized by Dirac-like conducting surface states, the existence of which has been confirmed in relatively clean metallic samples by angle-resolved photoemission spectroscopy, as well as by anomalous Aharonov-Bohm oscillations in the magnetoresistance of nanoribbons. However, a fundamental aspect of these surface states, namely, their robustness to time-reversal-invariant disorder, has remained relatively untested. In this work, we have synthesized thin nanotubes of Bi2Te3 with extremely insulating bulk at low temperatures due to disorder. Nonetheless, the magnetoresistance exhibits quantum oscillations as a function of the magnetic field along the axis of the nanotubes, with a period determined by the cross-sectional area of the outer surface. Detailed numerical simulations based on a recursive Green function method support that the resistance oscillations are arising from the topological surface states which have substantially longer localization length than that of other nontopological states. This observation demonstrates coherent transport at the surface even for highly disordered samples, thus providing a direct confirmation of the inherently topological character of surface states. The result also demonstrates a viable route for revealing the properties of topological states by suppressing the bulk conduction using disorder.

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