Role of UV/chlorine exposure during dry surface conditioning before integrated epi deposition process

Jerzy Ruzyllo, E. Rohr, M. Caymax, M. Baeyens, T. Conard, P. Mertens, M. Heyns

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Native/chemical oxide etching using the anhydrous HF (AHF)/methanol process before epitaxial deposition was investigated in a cluster incorporating surface processing module epi deposition reactor. The results of this research indicate that the AHF/methanol process alone leaves the Si surface in a state which does not allow growth of the haze-free epitaxial layer at 800 °C. If the surface is exposed to chlorine ambient following oxide etch, however, haze is eliminated and a high quality epi layer is grown. This effect is attributed primarily to the reduction of fluorine remaining on the surface following AHF/methanol oxide etch by chlorine. The proposed pre-epi surface preparation procedure, which does not involve any elevated temperature step, shows excellent promise for low-temperature fully integrated epitaxial processes.

Original languageEnglish (US)
Pages (from-to)233-236
Number of pages4
JournalDiffusion and Defect Data Pt.B: Solid State Phenomena
Volume65-66
StatePublished - 1999

Fingerprint

Chlorine
conditioning
chlorine
Oxides
Methanol
haze
methyl alcohol
oxides
Fluorine
Epitaxial layers
leaves
fluorine
Etching
modules
reactors
etching
Temperature
preparation
Processing
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Ruzyllo, J., Rohr, E., Caymax, M., Baeyens, M., Conard, T., Mertens, P., & Heyns, M. (1999). Role of UV/chlorine exposure during dry surface conditioning before integrated epi deposition process. Diffusion and Defect Data Pt.B: Solid State Phenomena, 65-66, 233-236.
Ruzyllo, Jerzy ; Rohr, E. ; Caymax, M. ; Baeyens, M. ; Conard, T. ; Mertens, P. ; Heyns, M. / Role of UV/chlorine exposure during dry surface conditioning before integrated epi deposition process. In: Diffusion and Defect Data Pt.B: Solid State Phenomena. 1999 ; Vol. 65-66. pp. 233-236.
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Ruzyllo, J, Rohr, E, Caymax, M, Baeyens, M, Conard, T, Mertens, P & Heyns, M 1999, 'Role of UV/chlorine exposure during dry surface conditioning before integrated epi deposition process', Diffusion and Defect Data Pt.B: Solid State Phenomena, vol. 65-66, pp. 233-236.

Role of UV/chlorine exposure during dry surface conditioning before integrated epi deposition process. / Ruzyllo, Jerzy; Rohr, E.; Caymax, M.; Baeyens, M.; Conard, T.; Mertens, P.; Heyns, M.

In: Diffusion and Defect Data Pt.B: Solid State Phenomena, Vol. 65-66, 1999, p. 233-236.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Role of UV/chlorine exposure during dry surface conditioning before integrated epi deposition process

AU - Ruzyllo, Jerzy

AU - Rohr, E.

AU - Caymax, M.

AU - Baeyens, M.

AU - Conard, T.

AU - Mertens, P.

AU - Heyns, M.

PY - 1999

Y1 - 1999

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AB - Native/chemical oxide etching using the anhydrous HF (AHF)/methanol process before epitaxial deposition was investigated in a cluster incorporating surface processing module epi deposition reactor. The results of this research indicate that the AHF/methanol process alone leaves the Si surface in a state which does not allow growth of the haze-free epitaxial layer at 800 °C. If the surface is exposed to chlorine ambient following oxide etch, however, haze is eliminated and a high quality epi layer is grown. This effect is attributed primarily to the reduction of fluorine remaining on the surface following AHF/methanol oxide etch by chlorine. The proposed pre-epi surface preparation procedure, which does not involve any elevated temperature step, shows excellent promise for low-temperature fully integrated epitaxial processes.

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