Role of UV/chlorine exposure during dry surface conditioning before integrated epi deposition process

Jerzy Ruzyllo, E. Rohr, M. Caymax, M. Baeyens, T. Conard, P. Mertens, M. Heyns

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Abstract

Native/chemical oxide etching using the anhydrous HF (AHF)/methanol process before epitaxial deposition was investigated in a cluster incorporating surface processing module epi deposition reactor. The results of this research indicate that the AHF/methanol process alone leaves the Si surface in a state which does not allow growth of the haze-free epitaxial layer at 800 °C. If the surface is exposed to chlorine ambient following oxide etch, however, haze is eliminated and a high quality epi layer is grown. This effect is attributed primarily to the reduction of fluorine remaining on the surface following AHF/methanol oxide etch by chlorine. The proposed pre-epi surface preparation procedure, which does not involve any elevated temperature step, shows excellent promise for low-temperature fully integrated epitaxial processes.

Original languageEnglish (US)
Pages (from-to)233-236
Number of pages4
JournalDiffusion and Defect Data Pt.B: Solid State Phenomena
Volume65-66
StatePublished - 1999

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Ruzyllo, J., Rohr, E., Caymax, M., Baeyens, M., Conard, T., Mertens, P., & Heyns, M. (1999). Role of UV/chlorine exposure during dry surface conditioning before integrated epi deposition process. Diffusion and Defect Data Pt.B: Solid State Phenomena, 65-66, 233-236.