Roles of several E′ variants in thermal gate oxide reliability

John F. Conley, Patrick M. Lenahan, H. L. Evans, R. K. Lowry, T. J. Morthorst

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We combine electron spin resonance measurements with vacuum ultraviolet, ultraviolet, and corona bias charge injection schemes to examine the properties and charge trapping roles of three E' variants in conventionally processed thermally grown thin film SiO2 on Si.

Original languageEnglish (US)
Pages (from-to)37-42
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume338
StatePublished - Dec 1 1994
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 5 1994Apr 8 1994

Fingerprint

Charge trapping
Charge injection
Oxides
coronas
Paramagnetic resonance
electron paramagnetic resonance
trapping
Vacuum
injection
Thin films
vacuum
oxides
thin films
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Conley, John F. ; Lenahan, Patrick M. ; Evans, H. L. ; Lowry, R. K. ; Morthorst, T. J. / Roles of several E′ variants in thermal gate oxide reliability. In: Materials Research Society Symposium - Proceedings. 1994 ; Vol. 338. pp. 37-42.
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author = "Conley, {John F.} and Lenahan, {Patrick M.} and Evans, {H. L.} and Lowry, {R. K.} and Morthorst, {T. J.}",
year = "1994",
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Roles of several E′ variants in thermal gate oxide reliability. / Conley, John F.; Lenahan, Patrick M.; Evans, H. L.; Lowry, R. K.; Morthorst, T. J.

In: Materials Research Society Symposium - Proceedings, Vol. 338, 01.12.1994, p. 37-42.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Roles of several E′ variants in thermal gate oxide reliability

AU - Conley, John F.

AU - Lenahan, Patrick M.

AU - Evans, H. L.

AU - Lowry, R. K.

AU - Morthorst, T. J.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We combine electron spin resonance measurements with vacuum ultraviolet, ultraviolet, and corona bias charge injection schemes to examine the properties and charge trapping roles of three E' variants in conventionally processed thermally grown thin film SiO2 on Si.

AB - We combine electron spin resonance measurements with vacuum ultraviolet, ultraviolet, and corona bias charge injection schemes to examine the properties and charge trapping roles of three E' variants in conventionally processed thermally grown thin film SiO2 on Si.

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M3 - Conference article

AN - SCOPUS:0028699608

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JO - Materials Research Society Symposium - Proceedings

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