Roles of several E′ variants in thermal gate oxide reliability

John F. Conley, Patrick M. Lenahan, H. L. Evans, R. K. Lowry, T. J. Morthorst

Research output: Contribution to journalConference article

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Abstract

We combine electron spin resonance measurements with vacuum ultraviolet, ultraviolet, and corona bias charge injection schemes to examine the properties and charge trapping roles of three E' variants in conventionally processed thermally grown thin film SiO2 on Si.

Original languageEnglish (US)
Pages (from-to)37-42
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume338
StatePublished - Dec 1 1994
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 5 1994Apr 8 1994

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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