Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon

J. F. Conley, Patrick M. Lenahan

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Abstract

Exposing thin films of amorphous SiO2 to molecular hydrogen at room temperature converts some silicon dangling bond defects, E' centers, into two hydrogen coupled complexes. We argue that these reactions may play important roles in radiation and hot carrier instabilities in metal/oxide/silicon devices.

Original languageEnglish (US)
Pages (from-to)2186-2191
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume39
Issue number6
DOIs
StatePublished - Jan 1 1992

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All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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