Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon

J. F. Conley, P. M. Lenahan

Research output: Contribution to journalArticle

79 Scopus citations

Abstract

Exposing thin films of amorphous SiO2 to molecular hydrogen at room temperature converts some silicon dangling bond defects, E' centers, into two hydrogen coupled complexes. These reactions may play important roles in radiation and hot carrier instabilities in metal/oxide/silicon devices.

Original languageEnglish (US)
Pages (from-to)40-42
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number1
DOIs
StatePublished - Dec 1 1993

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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