Roughness and phase evolution in Si1-xGex:H: Guidance for multijunction photovoltaics

N. J. Podraza, C. R. Wronski, M. W. Horn, R. W. Collins

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this study, the amorphous-phase roughening transition thickness has been determined as a function of process variables in plasma-enhanced chemical vapor deposition (PECVD) of hydrogenated amorphous silicongermanium alloys (a-Si 1-xGex:H). The process variables include the H 2-dilution gas flow ratio, the alloying flow ratio, the electrode configuration, and the He-dilution ratio. One clear feature of this study is a maximum in the amorphous roughening transition thickness (and hence surface stability) at a H2-dilution ratio just below the transition from amorphous to mixed-phase (amorphous +microcrystalline) growth. A second feature for high Ge content films is a significant increase in the roughening transition thickness for cathode PECVD (with a self-bias of ∼ -20 V). Additional features of interest involve suppression of the mixed-phase transition for (i) alloying with Ge, (ii) biasing the substrate cathodically, and (iii) diluting the gas with He.

Original languageEnglish (US)
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PublisherIEEE Computer Society
Pages1657-1660
Number of pages4
ISBN (Print)1424400163, 9781424400164
DOIs
StatePublished - Jan 1 2006
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: May 7 2006May 12 2006

Publication series

NameConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume2

Other

Other2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
CountryUnited States
CityWaikoloa, HI
Period5/7/065/12/06

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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  • Cite this

    Podraza, N. J., Wronski, C. R., Horn, M. W., & Collins, R. W. (2006). Roughness and phase evolution in Si1-xGex:H: Guidance for multijunction photovoltaics. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 1657-1660). [4059973] (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279807