Ruby fluorescence-enabled ultralong lock-on time high-gain gallium arsenic photoconductive semiconductor switch

Ju Hung Chao, Wenbin Zhu, Chang Jiang Chen, Yun Goo Lee, Annan Shang, Shizhuo Yin, Robert C. Hoffman

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report a new type of photoconductive semiconductor switch (PCSS), consisting of a semi-insulating gallium arsenic (GaAs) substrate and a front-bonded ruby crystal. The 532 nm laser pulses from an Nd-YAG laser incident on the front surface of the ruby crystal. A portion of the laser pulse passes through the crystal and reaches the GaAs substrate, and the remaining portion of the laser pulse is absorbed by the ruby crystal. This results in the emission of 694 nm fluorescent light. Furthermore, a portion of emitted fluorescent light also reaches the GaAs substrate. The highfluence 532 nm short laser pulse with a pulse width around several nanoseconds is used to trigger the PCSS entering the high-gain nonlinear mode, whereas the low-fluence longlifetime (on the order of a millisecond) 694 nm fluorescent light is used to maintain the lock-on time. Thus, an ultralong lock-on time on the order of millisecond is achieved, which is 3 orders of magnitude longer than a typical lock-on time of high-gain GaAs PCSS.

Original languageEnglish (US)
Pages (from-to)3929-3932
Number of pages4
JournalOptics Letters
Volume43
Issue number16
DOIs
StatePublished - Aug 15 2018

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ruby
high gain
arsenic
gallium
switches
fluorescence
pulses
crystals
lasers
YAG lasers
fluence
pulse duration
actuators

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Chao, Ju Hung ; Zhu, Wenbin ; Chen, Chang Jiang ; Lee, Yun Goo ; Shang, Annan ; Yin, Shizhuo ; Hoffman, Robert C. / Ruby fluorescence-enabled ultralong lock-on time high-gain gallium arsenic photoconductive semiconductor switch. In: Optics Letters. 2018 ; Vol. 43, No. 16. pp. 3929-3932.
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Ruby fluorescence-enabled ultralong lock-on time high-gain gallium arsenic photoconductive semiconductor switch. / Chao, Ju Hung; Zhu, Wenbin; Chen, Chang Jiang; Lee, Yun Goo; Shang, Annan; Yin, Shizhuo; Hoffman, Robert C.

In: Optics Letters, Vol. 43, No. 16, 15.08.2018, p. 3929-3932.

Research output: Contribution to journalArticle

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AU - Zhu, Wenbin

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AU - Yin, Shizhuo

AU - Hoffman, Robert C.

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AB - We report a new type of photoconductive semiconductor switch (PCSS), consisting of a semi-insulating gallium arsenic (GaAs) substrate and a front-bonded ruby crystal. The 532 nm laser pulses from an Nd-YAG laser incident on the front surface of the ruby crystal. A portion of the laser pulse passes through the crystal and reaches the GaAs substrate, and the remaining portion of the laser pulse is absorbed by the ruby crystal. This results in the emission of 694 nm fluorescent light. Furthermore, a portion of emitted fluorescent light also reaches the GaAs substrate. The highfluence 532 nm short laser pulse with a pulse width around several nanoseconds is used to trigger the PCSS entering the high-gain nonlinear mode, whereas the low-fluence longlifetime (on the order of a millisecond) 694 nm fluorescent light is used to maintain the lock-on time. Thus, an ultralong lock-on time on the order of millisecond is achieved, which is 3 orders of magnitude longer than a typical lock-on time of high-gain GaAs PCSS.

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