TY - JOUR
T1 - Scalable Substitutional Re-Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide
AU - Kozhakhmetov, Azimkhan
AU - Schuler, Bruno
AU - Tan, Anne Marie Z.
AU - Cochrane, Katherine A.
AU - Nasr, Joseph R.
AU - El-Sherif, Hesham
AU - Bansal, Anushka
AU - Vera, Alex
AU - Bojan, Vincent
AU - Redwing, Joan M.
AU - Bassim, Nabil
AU - Das, Saptarshi
AU - Hennig, Richard G.
AU - Weber-Bargioni, Alexander
AU - Robinson, Joshua A.
N1 - Funding Information:
A.K. and J.A.R acknowledge Intel through the Semiconductor Research Corporation Task 2746.001, the Penn State 2D Crystal Consortium (2DCC)-Materials Innovation Platform (2DCC-MIP) under NSF cooperative agreement DMR- 1539916, and NSF CAREER Award 1453924. Scanning probe measurements were performed at the Molecular Foundry supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. This work was supported as part of the Center for Novel Pathways to Quantum Coherence in Materials, an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Basic Energy Sciences. K.A.C. was supported by the University of California – National Lab Collaborative Research and Training (UC-NL CRT) program. A.W.-B. was supported by the U.S. Department of Energy Early Career Award. B.S. appreciates support from the Swiss National Science Foundation under project number P2SKP2 171770. A.M.Z.T. and R.G.H. were also funded by the NSF through the 2DCC-MIP under award DMR-1539916, and by additional awards DMR-1748464 and OAC-1740251. Computational resources were provided by the University of Florida Research Computing Center. A.B. and J.M.R. also would like to acknowledge the Penn State 2D Crystal Consortium (2DCC)-Materials Innovation Platform (2DCC-MIP) under NSF cooperative agreement DMR- 1539916.The authors also would like to acknowledge Jeffrey R. Shallenberger for assistance with XPS data analyses.
Funding Information:
A.K. and J.A.R acknowledge Intel through the Semiconductor Research Corporation Task 2746.001, the Penn State 2D Crystal Consortium (2DCC)‐Materials Innovation Platform (2DCC‐MIP) under NSF cooperative agreement DMR‐ 1539916, and NSF CAREER Award 1453924. Scanning probe measurements were performed at the Molecular Foundry supported by the Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE‐AC02‐05CH11231. This work was supported as part of the Center for Novel Pathways to Quantum Coherence in Materials, an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Basic Energy Sciences. K.A.C. was supported by the University of California – National Lab Collaborative Research and Training (UC‐NL CRT) program. A.W.‐B. was supported by the U.S. Department of Energy Early Career Award. B.S. appreciates support from the Swiss National Science Foundation under project number P2SKP2 171770. A.M.Z.T. and R.G.H. were also funded by the NSF through the 2DCC‐MIP under award DMR‐1539916, and by additional awards DMR‐1748464 and OAC‐1740251. Computational resources were provided by the University of Florida Research Computing Center. A.B. and J.M.R. also would like to acknowledge the Penn State 2D Crystal Consortium (2DCC)‐Materials Innovation Platform (2DCC‐MIP) under NSF cooperative agreement DMR‐ 1539916.The authors also would like to acknowledge Jeffrey R. Shallenberger for assistance with XPS data analyses.
Publisher Copyright:
© 2020 Wiley-VCH GmbH
PY - 2020/12/17
Y1 - 2020/12/17
N2 - Reliable, controlled doping of 2D transition metal dichalcogenides will enable the realization of next-generation electronic, logic-memory, and magnetic devices based on these materials. However, to date, accurate control over dopant concentration and scalability of the process remains a challenge. Here, a systematic study of scalable in situ doping of fully coalesced 2D WSe2 films with Re atoms via metal–organic chemical vapor deposition is reported. Dopant concentrations are uniformly distributed over the substrate surface, with precisely controlled concentrations down to <0.001% Re achieved by tuning the precursor partial pressure. Moreover, the impact of doping on morphological, chemical, optical, and electronic properties of WSe2 is elucidated with detailed experimental and theoretical examinations, confirming that the substitutional doping of Re at the W site leads to n-type behavior of WSe2. Transport characteristics of fabricated back-gated field-effect-transistors are directly correlated to the dopant concentration, with degrading device performances for doping concentrations exceeding 1% of Re. The study demonstrates a viable approach to introducing true dopant-level impurities with high precision, which can be scaled up to batch production for applications beyond digital electronics.
AB - Reliable, controlled doping of 2D transition metal dichalcogenides will enable the realization of next-generation electronic, logic-memory, and magnetic devices based on these materials. However, to date, accurate control over dopant concentration and scalability of the process remains a challenge. Here, a systematic study of scalable in situ doping of fully coalesced 2D WSe2 films with Re atoms via metal–organic chemical vapor deposition is reported. Dopant concentrations are uniformly distributed over the substrate surface, with precisely controlled concentrations down to <0.001% Re achieved by tuning the precursor partial pressure. Moreover, the impact of doping on morphological, chemical, optical, and electronic properties of WSe2 is elucidated with detailed experimental and theoretical examinations, confirming that the substitutional doping of Re at the W site leads to n-type behavior of WSe2. Transport characteristics of fabricated back-gated field-effect-transistors are directly correlated to the dopant concentration, with degrading device performances for doping concentrations exceeding 1% of Re. The study demonstrates a viable approach to introducing true dopant-level impurities with high precision, which can be scaled up to batch production for applications beyond digital electronics.
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U2 - 10.1002/adma.202005159
DO - 10.1002/adma.202005159
M3 - Article
C2 - 33169451
AN - SCOPUS:85096965598
VL - 32
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 50
M1 - 2005159
ER -