Abstract
The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO3 exceeding 600 nm hr−1. This tenfold increase in growth rate compared to SrTiO3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.
| Original language | English (US) |
|---|---|
| Article number | 2464 |
| Journal | Nature communications |
| Volume | 10 |
| Issue number | 1 |
| DOIs | |
| State | Published - Dec 1 2019 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Biochemistry, Genetics and Molecular Biology(all)
- Physics and Astronomy(all)
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Scaling growth rates for perovskite oxide virtual substrates on silicon. / Lapano, Jason; Brahlek, Matthew; Zhang, Lei; Roth, Joseph; Pogrebnyakov, Alexej; Engel-Herbert, Roman.
In: Nature communications, Vol. 10, No. 1, 2464, 01.12.2019.Research output: Contribution to journal › Article
TY - JOUR
T1 - Scaling growth rates for perovskite oxide virtual substrates on silicon
AU - Lapano, Jason
AU - Brahlek, Matthew
AU - Zhang, Lei
AU - Roth, Joseph
AU - Pogrebnyakov, Alexej
AU - Engel-Herbert, Roman
PY - 2019/12/1
Y1 - 2019/12/1
N2 - The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO3 exceeding 600 nm hr−1. This tenfold increase in growth rate compared to SrTiO3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.
AB - The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO3 exceeding 600 nm hr−1. This tenfold increase in growth rate compared to SrTiO3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.
UR - http://www.scopus.com/inward/record.url?scp=85066793200&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85066793200&partnerID=8YFLogxK
U2 - 10.1038/s41467-019-10273-2
DO - 10.1038/s41467-019-10273-2
M3 - Article
C2 - 31165726
AN - SCOPUS:85066793200
VL - 10
JO - Nature Communications
JF - Nature Communications
SN - 2041-1723
IS - 1
M1 - 2464
ER -