Scaling growth rates for perovskite oxide virtual substrates on silicon

Jason Lapano, Matthew Brahlek, Lei Zhang, Joseph Roth, Alexej Pogrebnyakov, Roman Engel-Herbert

Research output: Contribution to journalArticle

Abstract

The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO3 exceeding 600 nm hr−1. This tenfold increase in growth rate compared to SrTiO3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.

Original languageEnglish (US)
Article number2464
JournalNature communications
Volume10
Issue number1
DOIs
StatePublished - Dec 1 2019

Fingerprint

Silicon
Oxides
scaling
oxides
silicon
Substrates
Growth
Quantum computers
Epitaxial films
Buffer layers
quantum computation
Buffers
Molecular beam epitaxy
microelectronics
Microelectronics
Computer hardware
availability
perovskite
hardware
Technology

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Lapano, Jason ; Brahlek, Matthew ; Zhang, Lei ; Roth, Joseph ; Pogrebnyakov, Alexej ; Engel-Herbert, Roman. / Scaling growth rates for perovskite oxide virtual substrates on silicon. In: Nature communications. 2019 ; Vol. 10, No. 1.
@article{1f3b298cafbb4dd9980598b02f83806d,
title = "Scaling growth rates for perovskite oxide virtual substrates on silicon",
abstract = "The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO3 exceeding 600 nm hr−1. This tenfold increase in growth rate compared to SrTiO3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.",
author = "Jason Lapano and Matthew Brahlek and Lei Zhang and Joseph Roth and Alexej Pogrebnyakov and Roman Engel-Herbert",
year = "2019",
month = "12",
day = "1",
doi = "10.1038/s41467-019-10273-2",
language = "English (US)",
volume = "10",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",
number = "1",

}

Scaling growth rates for perovskite oxide virtual substrates on silicon. / Lapano, Jason; Brahlek, Matthew; Zhang, Lei; Roth, Joseph; Pogrebnyakov, Alexej; Engel-Herbert, Roman.

In: Nature communications, Vol. 10, No. 1, 2464, 01.12.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Scaling growth rates for perovskite oxide virtual substrates on silicon

AU - Lapano, Jason

AU - Brahlek, Matthew

AU - Zhang, Lei

AU - Roth, Joseph

AU - Pogrebnyakov, Alexej

AU - Engel-Herbert, Roman

PY - 2019/12/1

Y1 - 2019/12/1

N2 - The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO3 exceeding 600 nm hr−1. This tenfold increase in growth rate compared to SrTiO3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.

AB - The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO3 exceeding 600 nm hr−1. This tenfold increase in growth rate compared to SrTiO3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.

UR - http://www.scopus.com/inward/record.url?scp=85066793200&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85066793200&partnerID=8YFLogxK

U2 - 10.1038/s41467-019-10273-2

DO - 10.1038/s41467-019-10273-2

M3 - Article

VL - 10

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

IS - 1

M1 - 2464

ER -