TY - JOUR
T1 - Scaling growth rates for perovskite oxide virtual substrates on silicon
AU - Lapano, Jason
AU - Brahlek, Matthew
AU - Zhang, Lei
AU - Roth, Joseph
AU - Pogrebnyakov, Alexej
AU - Engel-Herbert, Roman
N1 - Funding Information:
J.M.L. and R.E.H. acknowledge National Science Foundation through the Penn State MRSEC program DMR-1420620, J.R. acknowledges DMR-1629477 and support through the NSF graduate student fellowship, M.B. and R.E.H. acknowledge the Department of Energy (Grant DE-SC0012375), L.Z. acknowledges the National Science Foundation through DMR-1352502. We thank Dr. Arnab Sen Gupta for assisting in growth of samples, Profs. Jon-Paul Maria and Venkat Gopalan, as well as Drs. Craig Eaton and Julian Walker for helpful discussions.
Publisher Copyright:
© 2019, The Author(s).
PY - 2019/12/1
Y1 - 2019/12/1
N2 - The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO3 exceeding 600 nm hr−1. This tenfold increase in growth rate compared to SrTiO3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.
AB - The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO3 exceeding 600 nm hr−1. This tenfold increase in growth rate compared to SrTiO3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.
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U2 - 10.1038/s41467-019-10273-2
DO - 10.1038/s41467-019-10273-2
M3 - Article
C2 - 31165726
AN - SCOPUS:85066793200
VL - 10
JO - Nature Communications
JF - Nature Communications
SN - 2041-1723
IS - 1
M1 - 2464
ER -