Scaling growth rates for perovskite oxide virtual substrates on silicon

Jason Lapano, Matthew Brahlek, Lei Zhang, Joseph Roth, Alexej Pogrebnyakov, Roman Engel-Herbert

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO3 exceeding 600 nm hr−1. This tenfold increase in growth rate compared to SrTiO3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.

Original languageEnglish (US)
Article number2464
JournalNature communications
Volume10
Issue number1
DOIs
StatePublished - Dec 1 2019

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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